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BZT03C12

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size180KB,4 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
Download Datasheet Parametric View All

BZT03C12 Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE

BZT03C12 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Maximum breakdown voltage12.7 V
Minimum breakdown voltage11.4 V
Processing package descriptionHERMETIC SEALED, SOD-57, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingNOT SPECIFIED
Terminal locationAXIAL
Packaging MaterialsGlass
CraftsmanshipAVALANCHE
structuresingle
Shell connectionisolation
Diode component materialssilicon
Maximum power consumption limit1.3 W
polarityunidirectional
Diode typeTRANS voltage SUPPRESSOR diode
Maximum non-repetitive peak speed power600 W
BL
GALAXY ELECTRICAL
BZT03---SERIES
V
Z
:
6.2 -- 270 V
POWER DISSIPATION: 1.3W
DO -- 15
ZENER DIODES
FEATURES
Glass passivated junction
Hermetically sealed package
Clamping time in picoseconds
MECHANICAL DATA
Case:JEDEC DO-15
Terminals: Axial leads solderable per MIL-
STD-202,Method 208
Polarity: Color band denotes cathods end
Weight: 0.014 ounces,0.39 grams
Mounting position: any
Maximum Ratings and Thermal Characteristics
Parameter
Power dissipation at T
A
=25℃
Forward voltage @I
F
=0.5A
Maximum thermal resistance
junction to ambient (Note 1)
Peak reverse power dissipation
tp=100µs square wave
Junction temperature
Storage temperature range
Note:1.On PC board with spacing 25mm
(T
A
=25℃ unless otherwise noted)
Symbol
P
tot
V
F
R
θJA
P
ZSM
T
J
T
STG
Value
1.3
1.2
100
600
175
-65 to +175
Unit
W
V
℃/W
W
www.galaxycn.com
Document Number 0284017
BL
GALAXY ELECTRICAL
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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