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BZT52B33

Description
33 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size119KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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BZT52B33 Overview

33 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

BZT52B33 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
package instructionR-PDSO-G2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance80 Ω
JESD-30 codeR-PDSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation0.41 W
Certification statusNot Qualified
Nominal reference voltage33 V
surface mountYES
technologyZENER
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Maximum voltage tolerance2.12%
Working test current5 mA
BZT52-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Silicon planar Zener diodes
• The Zener voltages are graded according to the
international E24 standard
• AEC-Q101 qualified
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.4 to 75
2.5; 5
Pulse current
Single
UNIT
V
mA
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
BZT52C2V4-E3-08 to BZT52C75-E3-08
BZT52B2V4-E3-08 to BZT52B75-E3-08
BZT52C2V4-HE3-08 to BZT52C75-HE3-08
BZT52-series
BZT52B2V4-HE3-08 to BZT52B75-HE3-08
BZT52C2V4-E3-18 to BZT52C75-E3-18
BZT52B2V4-E3-18 to BZT52B75-E3-18
BZT52C2V4-HE3-18 to BZT52C75-HE3-18
BZT52B2V4-HE3-18 to BZT52B75-HE3-18
10 000 (8 mm tape on 13" reel)
10 000/box
3000 (8 mm tape on 7" reel)
15 000/box
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
PACKAGE
PACKAGE NAME
SOD-123
WEIGHT
10.3 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Diode on ceramic substrate 0.7 mm; 5 mm
2
pad areas
Diode on ceramic substrate 0.7 mm; 2.5 mm
2
pad areas
See table “Electrical Characteristics “
Valid provided that electrodes are kept at
ambient temperature
R
thJA
T
j
T
stg
T
op
300
150
- 65 to + 150
- 55 to + 150
K/W
°C
°C
°C
SYMBOL
P
tot
P
tot
VALUE
500
410
UNIT
mW
mW
Power dissipation
Zener current
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Operating temperature range
Rev. 1.8, 26-Feb-13
Document Number: 85760
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

BZT52B33 Related Products

BZT52B33 BZT52B2V4 BZT52B51 BZT52B68 BZT52C30 BZT52C75
Description 33 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 2.4 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 51 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 30 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 30 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 75 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Maker Vishay Vishay Vishay Vishay Vishay Vishay
package instruction R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2
Contacts 2 2 2 2 2 2
Reach Compliance Code unknow unknown unknow unknown unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type ZENER DIODE ZENER DIODE ZENER DIODE ZENER DIODE ZENER DIODE ZENER DIODE
Maximum dynamic impedance 80 Ω 600 Ω 100 Ω 200 Ω 80 Ω 250 Ω
JESD-30 code R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2
JESD-609 code e3 e3 e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1 1 1
Number of components 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 NOT SPECIFIED 260 260
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
Maximum power dissipation 0.41 W 0.41 W 0.41 W 0.41 W 0.41 W 0.41 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Nominal reference voltage 33 V 2.4 V 51 V 68 V 30 V 75 V
surface mount YES YES YES YES YES YES
technology ZENER ZENER ZENER ZENER ZENER ZENER
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40 NOT SPECIFIED 40 40
Maximum voltage tolerance 2.12% 2.08% 1.96% 2.06% 6.67% 6.04%
Working test current 5 mA 5 mA 5 mA 2.5 mA 5 mA 2.5 mA

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