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BZT52B9V1-V

Description
9.1 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size260KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

BZT52B9V1-V Overview

9.1 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

BZT52B9V1-V Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionR-PDSO-G2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance10 Ω
JESD-30 codeR-PDSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation0.41 W
Certification statusNot Qualified
Nominal reference voltage9.1 V
surface mountYES
technologyZENER
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Maximum voltage tolerance1.98%
Working test current5 mA
Base Number Matches1
BZT52-V-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Silicon Planar Power Zener Diodes
• These diodes are also available in other
e3
case styles and other configurations
including: the SOT-23 case with type des-
ignation BZX84 series, the dual zener diode com-
mon anode configuration in the SOT-23 case with
type designation AZ23 series and the dual zener
diode common cathode configuration in the SOT-
23 case with type designation DZ23 series.
• The Zener voltages are graded according to the
international E 24 standard.
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
17431
Mechanical Data
Case:
SOD-123 Plastic case
Weight:
approx. 9.3 mg
Packaging Codes/Options:
GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box
GS08 / 3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Zener current see table "
Characteristics "
Power dissipation
Power dissipation
1)
2)
Test condition
Symbol
Value
Unit
P
tot
P
tot
500
2)
410
1)
mW
mW
Diode on ceramic substrate 0.7 mm; 2.5 mm
2
pad areas
Diode on ceramic substrate 0.7 mm; 5 mm
2
pad areas
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
J
T
S
Value
300
1)
150
- 65 to + 150
Unit
°C/W
°C
°C
Valid provided that electrodes are kept at ambient temperature
Document Number 85760
Rev. 1.5, 21-Apr-05
www.vishay.com
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