DATA SHEET
SEMICONDUCTOR
SOD-123 Plastic-Encapsulate Diode
ZENER DIODE
BZT52C2V4-BZT52C51
SOD123
Unit:inch(mm)
FEATURES
•Planar
Die Construction
•500mW
Power Dissipation on Ceramic PCB
•General
Purpose Medium Current
•Ideally
Suited for Automated Assembly
Processes
•
High temperature soldering : 260
O
C / 10 seconds at terminals
•
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
Symbol
A
A1
A2
b
c
D
E
E1
L
L1
θ
Dimensions In Millimeters
Min
Max
1.050
1.250
0.000
0.100
1.050
1.150
0.450
0.650
0.080
0.150
1.500
1.700
2.600
2.800
3.550
3.850
0.500 REF
0.250
0.450
0°
8°
Dimensions In Inches
Min
Max
0.041
0.049
0.000
0.004
0.041
0.045
0.018
0.026
0.003
0.006
0.059
0.067
0.102
0.110
0.140
0.152
0.020 REF
0.010
0.018
0°
8°
Maximum Ratings (Tamb=25℃ unless otherwise specified)
Characteristic
Forward Voltage
@ IF = 10mA
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
VF
Pd
RθJA
Tj, TSTG
Value
0.9
500
305
-55 to +150
Unit
V
mW
℃/W
℃
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REV.02 20120403
BZT52C2V4-BZT52C51
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Type
Number
Marking
Code
(Note 3)
Zener Voltage Range
(Note 2)
V
z
@I
ZT
Nom (V)
Min (V)
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
Max (V)
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
I
ZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
Z
ZT
Maximum Zener
Impedance (Note 4)
@
I
ZT
Maximum
Reverse
Current
I
ZK
I
R
uA
50
20
10
5.0
5.0
3.0
3.0
3.0
2.0
1.0
3.0
2.0
1.0
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
@ V
R
V
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
32
35
38
Z
ZK
@ I
ZK
W
Typical
Temperature
Coefficient
@ I
ZTC
mV/°C
Min
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
10.0
10.0
10.0
Max
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
25.3
29.4
33.4
37.4
41.2
12.0
12.0
12.0
Test
Current
I
ZTC
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
5
5
5
mA
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
700
750
750
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
BZT52C2V4
BZT52C2V7
BZT52C3V0
BZT52C3V3
BZT52C3V6
BZT52C3V9
BZT52C4V3
BZT52C4V7
BZT52C5V1
BZT52C5V6
BZT52C6V2
BZT52C6V8
BZT52C7V5
BZT52C8V2
BZT52C9V1
BZT52C10
BZT52C11
BZT52C12
BZT52C13
BZT52C15
BZT52C16
BZT52C18
BZT52C20
BZT52C22
BZT52C24
BZT52C27
BZT52C30
BZT52C33
BZT52C36
BZT52C39
BZT52C43
BZT52C47
BZT52C51
WX
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WJ
WK
WL
WM
WN
WO
WP
WQ
WR
WS
WT
WU
WV
WW
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
100
100
100
Notes:
1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm
2
.
2. Tested with pulses, period = 5ms, pulse width = 300ms.
3. When provided, otherwise, parts are provided with date code only, and type number identifications appears on reel only.
4. f = 1KHz.
5. Thermal resistance from junction to ambient and form junction to lead
P.C.B mounted on 0.2x0.2" (5.0x5.0mm) copper pad areas
R
£K
JL= R
£K
JC=100
¢J
/ W
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REV.02 20120403
Typical Characteristics
0.6
BZT52C2V4-BZT52C51
50
T
j
= 25°C
C2V7
C3V9
C5V6
C6V8
C6V2
C8V2
C3V3
C4V7
0.5
0.4
I
Z
, ZENER CURRENT (mA)
40
P
D
, POWER DISSIPATION (W)
30
0.3
20
0.2
0.1
10
Test Current I
Z
5.0mA
0
0
0
25
50
75
100
125
150
0
1
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Power Dissipation vs Ambient Temperature
8
9
3
4
5
6
7
V
Z
, ZENER VOLTAGE (V)
Fig. 2 Zener Breakdown Characteristics
2
C39
10
30
T
j
= 25°C
C10
C12
10
T
j
= 25°C
I
Z
, ZENER CURRENT (mA)
20
C15
I
Z
, ZENER CURRENT (mA)
8
6
C18
Test current I
Z
2mA
C27
C33
C36
10
C22
Test current I
Z
5mA
4
Test Current I
Z
2mA
2
0
0
10
20
30
V
Z
, ZENER VOLTAGE (V)
Fig. 3 Zener Breakdown Characteristics
1000
40
0
10
30 40 50 60 70 80 90 100
V
Z
, ZENER VOLTAGE (V)
Fig. 4 Zener Breakdown Characteristics
20
T
j
= 25 °C
f = 1MHz
C
T
, TOTAL CAPACITANCE (pF)
V
R
= 1V
V
R
= 2V
100
V
R
= 1V
3
V
R
= 2V
10
1
10
100
V
Z
, NOMINAL ZENER VOLTAGE (V)
Fig. 5 Total Capacitance vs Nominal Zener Voltage
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REV.02 20120403
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