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BZT52C18

Description
18 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Categorysemiconductor    Discrete semiconductor   
File Size293KB,3 Pages
ManufacturerYEA SHIN TECHNOLOGY CO.,LTD
Websitehttp://www.yeashin.com/
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BZT52C18 Overview

18 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

BZT52C18 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Rated working voltage18 V
Processing package descriptionPLASTIC PACKAGE-2
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipZENER
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.4100 W
polarityunidirectional
Diode typeZener diode
Working test current5 mA
Maximum total reference voltage6.41 %
DATA SHEET
SEMICONDUCTOR
SOD-123 Plastic-Encapsulate Diode
ZENER DIODE
BZT52C2V4-BZT52C51
SOD123
Unit:inch(mm)
FEATURES
•Planar
Die Construction
•500mW
Power Dissipation on Ceramic PCB
•General
Purpose Medium Current
•Ideally
Suited for Automated Assembly
Processes
High temperature soldering : 260
O
C / 10 seconds at terminals
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
Symbol
A
A1
A2
b
c
D
E
E1
L
L1
θ
Dimensions In Millimeters
Min
Max
1.050
1.250
0.000
0.100
1.050
1.150
0.450
0.650
0.080
0.150
1.500
1.700
2.600
2.800
3.550
3.850
0.500 REF
0.250
0.450
Dimensions In Inches
Min
Max
0.041
0.049
0.000
0.004
0.041
0.045
0.018
0.026
0.003
0.006
0.059
0.067
0.102
0.110
0.140
0.152
0.020 REF
0.010
0.018
Maximum Ratings (Tamb=25℃ unless otherwise specified)
Characteristic
Forward Voltage
@ IF = 10mA
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
VF
Pd
RθJA
Tj, TSTG
Value
0.9
500
305
-55 to +150
Unit
V
mW
℃/W
http://www.yeashin.com
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