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BZV85C9V1

Description
9.1 V, 1.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size58KB,3 Pages
ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.
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BZV85C9V1 Overview

9.1 V, 1.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41

CHONGQING PINGYANG ELECTRONICS CO.,LTD.
BZV85C2V7 THRU BZV85C220
SILICON PLANAR ZENER DIODES
FEATURES
·Voltage
Range: 2.7V to 220V
·Double
siug type construction
DO-41
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
.034(0.9)
.028(0.7)
DIA.
DIA.
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color
band denotes cathode end
·Mounting
position:
Any
·Weight:
0.33 grams
.107(2.7)
.080(2.0)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
Absolute Maximum Ratings
(T
a
=25°C)
SYMBOL
VALUE
1)
units
W
°C
Zener Current see Table
“Characterstics”
Power Dissipation at T
amb
=25°C
Junction Temperature
1)
P
tot
T
J
1
200
Valid provided that leads at a distance of 8 mm form case are kept at ambient temperature.
Characteristics at T
amb
=25°C
SYMBOL
Min.
--
--
Typ.
--
--
Max.
170
1)
1.2
units
K/W
V
Thermal Resistance Junction to
Ambient Air
Forward Voltage at I
F
=200mA
R
thA
V
F
Valid provided that leads at a distance of 8 mm form case are kept at ambient temperature.
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