KSB772
KSB772
Audio Frequency Power Amplifier
• Low Speed Switching
• Complement to KSD882
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
R
θja
R
θjc
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction to Ambient
Junction to Case
Junction Temperature
Storage Temperature
Parameter
Value
- 40
- 30
-5
-3
-7
- 0.6
10
1
132
13.5
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
°C/W
°C/W
°C
°C
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
V
CB
= - 30V, I
E
= 0
V
EB
= - 3V, I
C
= 0
V
CE
= - 2V, I
C
= - 20mA
V
CE
= - 2V, I
C
= - 1A
I
C
= - 2A, I
B
= - 0.2A
I
C
= - 2A, I
B
= - 0.2A
V
CE
= - 5V, I
E
= - 0.1A
V
CB
= - 10V, I
E
= 0
f = 1MHz
30
60
220
160
- 0.3
- 1.0
80
55
Min.
Typ.
Max.
-1
-1
400
- 0.5
- 2.0
V
V
MHz
pF
Units
µA
µA
* Pulse Test: PW≤350µs, Duty Cycle≤2%
h
FE
Classificntion
Classification
h
FE2
R
60 ~ 120
O
100 ~ 200
Y
160 ~ 320
G
200 ~ 400
©2002 Fairchild Semiconductor Corporation
Rev. B, October 2002
KSB772
Typical Characteristics
-2.0
1000
V
CE
= -2V
I
C
[A], COLLECTOR CURRENT
-1.6
-1.2
I
B
= -8mA
I
B
= -7mA
I
B
= -6mA
I
B
= -5mA
h
FE
, DC CURRENT GAIN
I
B
= -10mA
I
B
= -9mA
100
-0.8
I
B
= -4mA
I
B
= -3mA
10
-0.4
I
B
= -2mA
I
B
= -1mA
0
-4
-8
-12
-16
-20
1
-1
-10
-100
-1000
-10000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
CE
(sat),V
BE
(sat)[mV] SATURATION VOLTAGE
-10000
1000
I
C
= 10· I
B
I
E
= 0
f=1MHz
-1000
C
ob
[pF], CAPACITANCE
-100
-1000
-10000
V
BE
(sat)
-100
100
10
-10
V
CE
(sat)
-1
-1
-10
1
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
-10
V
CE
=5V
I
C
MAX(Pulse)
10
ms
Dis
Lim sipat
ited ion
1m
s
s
0u
10
100
I
C
[A], COLLECTOR CURRENT
I
C
MAX(DC)
-1
s/b
Lim
ite
d
10
-0.1
V
CEO
MAX
1
-0.01
-0.1
-1
-0.01
-1
-10
-100
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Current Gain Bandwidth Product
Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
Rev. B, October 2002
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As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
RF/Wirelessly
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