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ZTX458STZ

Description
Small Signal Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size75KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZTX458STZ Overview

Small Signal Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX458STZ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionIN-LINE, R-PSIP-W3
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)0.3 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
VCEsat-Max0.5 V
NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 2 – MARCH 1994
FEATURES
* 400 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
= 1 Watt
ZTX458
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
100
100
15
50
5
MIN.
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
TYP.
MAX.
E-Line
TO92 Compatible
VALUE
400
400
5
300
1
-55 to +200
UNIT
V
V
V
100
100
100
0.2
0.5
0.9
0.9
300
MHz
pF
nA
nA
nA
V
V
V
V
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=320V
VCE=320V
V
EB
=4V
I
C
=20mA, I
B
=2mA
I
C
=50mA, I
B
=6mA
I
C
=50mA, I
B
=5mA
IC=50mA, V
CE
=10V
I
C
=1mA, V
CE
=10V
I
C
=50mA, V
CE
=10V
I
C
=100mA, V
CE
=10V*
I
C
=10mA, V
CE
=20V
f=20MHz
V
CB
=20V, f=1MHz
UNIT
V
V
V
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Collector-Base
Breakdown Voltage
400
400
5
3-182
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