ZTX951STOA datasheet, PDF - EEWORLD Datasheet

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ZTX951STOA: DescriptionPower Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size84KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZTX951STOA Overview

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX951STOA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	TO-92 COMPATIBLE, E-LINE PACKAGE-3
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	120 MHz
VCEsat-Max	0.3 V

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PNP SILICON PLANAR MEDIUM POWER

HIGH CURRENT TRANSISTOR

ISSUE 4 JUNE 94

*

4 Amps continuous current

Up to 15 Amps peak current

Very low saturation voltage

Excellent gain up to 10 Amps

Spice model available

ZTX951

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Practical Power Dissipation*

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

totp

P

tot

T

j

:T

stg

-100

-60

-6

-15

-4

1.58

1.2

E-Line

TO92 Compatible

VALUE

UNIT

V

A

W

°C

-55 to +200

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

PARAMETER

Collector-Base Breakdown

Voltage

Collector-Emitter Breakdown

Voltag

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation

Voltage

SYMBOL

V

(BR)CBO

V

(BR)CER

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CER

R

≤

1K

Ω

I

EBO

V

CE(sat)

-15

-60

-120

-220

-960

3-315

MIN.

-100

-60

-6

TYP.

-140

-90

-8

-50

-1

-50

-1

-10

-50

-100

-160

-300

-1100

MAX.

UNIT

V

nA

mV

CONDITIONS.

I

C

=-100

µ

A

IC=-1

µ

A, RB

≤

1K

Ω

I

C

=-10mA*

I

E

=-100

µ

A

V

CB

=-80V

V

CB

=-80V, T

amb

=100°C

V

CB

=-80V

V

CB

=-80V, T

amb

=100°C

V

EB

=-6V

I

C

=-100mA, I

B

=-10mA*

I

C

=-1A, I

B

=-100mA*

I

C

=-2A, I

B

=-200mA*

I

C

=-4A, I

B

=-400mA*

I

C

=-4A, I

B

=-400mA*

µ

A

µ

A

Base-Emitter

Saturation Voltage

V

BE(sat)

ZTX951STOA Related Products

	ZTX951STOA	ZTX951STOB
Description	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified?	conform to	conform to
Maker	Zetex Semiconductors	Zetex Semiconductors
package instruction	TO-92 COMPATIBLE, E-LINE PACKAGE-3	IN-LINE, R-PSIP-W3
Reach Compliance Code	_compli	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	4 A	4 A
Collector-emitter maximum voltage	60 V	60 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	10
JESD-30 code	R-PSIP-W3	R-PSIP-W3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	200 °C	200 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Matte Tin (Sn)	MATTE TIN
Terminal form	WIRE	WIRE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	120 MHz	120 MHz
VCEsat-Max	0.3 V	0.3 V

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