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ZVP4525E6TC

Description
Small Signal Field-Effect Transistor, 0.197A I(D), 250V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size404KB,8 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric Compare View All

ZVP4525E6TC Overview

Small Signal Field-Effect Transistor, 0.197A I(D), 250V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN

ZVP4525E6TC Parametric

Parameter NameAttribute value
MakerZetex Semiconductors
package instructionSOT-23, 6 PIN
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (ID)0.197 A
Maximum drain-source on-resistance14 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
ZVP4525E6
250V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(
DESCRIPTION
This 250V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
SOT89 and SOT223 versions are also available.
FEATURES
High voltage
Low on-resistance
Fast switching speed
Low gate drive
Low threshold
Complementary N-channel Type ZVN4525E6
SOT23-6 package
SOT23-6
APPLICATIONS
Earth Recall and dialling switches
Electronic hook switches
High Voltage Power MOSFET Drivers
Telecom call routers
Solid state relays
Top View
ORDERING INFORMATION
DEVICE
ZVP4525TA
ZVP4525TC
REEL SIZE
(inches)
7
13
TAPE WIDTH (mm)
8mm embossed
8mm embossed
QUANTITY
PER REEL
3000 units
10000 units
DEVICE MARKING
P52
ISSUE 1 - MARCH 2001
1

ZVP4525E6TC Related Products

ZVP4525E6TC ZVP4525E6TA
Description Small Signal Field-Effect Transistor, 0.197A I(D), 250V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN Small Signal Field-Effect Transistor, 0.197A I(D), 250V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN
Maker Zetex Semiconductors Zetex Semiconductors
package instruction SOT-23, 6 PIN SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code unknow unknown
ECCN code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 250 V 250 V
Maximum drain current (ID) 0.197 A 0.197 A
Maximum drain-source on-resistance 14 Ω 14 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G6 R-PDSO-G6
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 6 6
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type P-CHANNEL P-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface MATTE TIN Matte Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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