ZXT4M322
MPPS
TM
Miniature Package Power Solutions
70V PNP LOW SATURATION TRANSISTOR
SUMMARY
PNP— V
CEO
= -70V; R
SAT
=
117m ; I
C
= -2.5A
DESCRIPTION
Packaged in the new innovative 2mm x 2mm MLP (Micro Leaded Package) outline,
this new 4th generation low saturation PNP transistor offers extremely low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
Additionally users gain several other
key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower Package Height (0.9mm nom)
Reduced component count
MLP322
FEATURES
•
Low Equivalent On Resistance
•
Extremely Low Saturation Voltage
(-220mV max @1A)
•
h
FE
specified up to 3A
•
I
C
=2.5A Continuous Collector Current
•
2mm x 2mm MLP
APPLICATIONS
•
DC - DC Converters
•
DC - DC Modules
•
Power switches
•
Motor control
ORDERING INFORMATION
DEVICE
ZXTD4M322TA
ZXTD4M322TC
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000
10000
DEVICE MARKING
•
S4
ISSUE 1 - JUNE 2003
1
Underside View
SEMICONDUCTORS
ZXT4M322
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at TA=25°C
Linear Derating Factor
(a)
(a)
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
P
D
P
D
P
D
T
j
:T
stg
T
j
LIMIT
-70
-70
-7.5
-3
-2.5
-1000
1.5
12
2.45
19.6
1
8
3
24
-55 to +150
150
UNIT
V
V
V
A
A
mA
W
mW/ C
W
mW/ C
W
mW/ C
W
mW/ C
C
C
Power Dissipation at TA=25°C
(b)
Linear Derating Factor
Power Dissipation at TA=25°C
(d)
Linear Derating Factor
Power Dissipation at TA=25°C
(e)
Linear Derating Factor
Operating & Storage Temperature Range
Junction Temperature
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
(a)
Junction to Ambient
(b)
Junction to Ambient
(d)
Junction to Ambient
(e)
SYMBOL
R
JA
R
JA
R
JA
R
JA
VALUE
83
51
125
42
UNIT
C/W
C/W
C/W
C/W
NOTES
(a) For a single device surface mounted on
10
sq cm 1oz copper on FR4 PCB, in still air conditions
with all exposed pads attached.
(b) For a single device surface mounted on
10
sq cm 1oz copper on FR4 PCB, in still air conditions measured at t 5 secs
with all exposed pads
attached.
(c) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(d) For a single device surface mounted on 10 sq cm 1oz copper FR4 PCB, in still air conditions
with minimal lead connections only.
(e) For a single device surface mounted on 65 sq cm 2oz copper FR4 PCB, in still air conditions
with all exposed pads attached.
(f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in
the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight and
1mm wide tracks is Rth= 300°C/W giving a power rating of Ptot=420mW
ISSUE 1 - JUNE 2003
SEMICONDUCTORS
2
ZXT4M322
TYPICAL CHARACTERISTICS
ISSUE 1 - JUNE 2003
3
SEMICONDUCTORS
ZXT4M322
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
-35
-135
-140
-175
-0.94
-0.78
300
300
175
40
150
470
450
275
60
10
180
14
40
700
20
MIN.
-70
-70
-7.5
TYP.
-150
-125
-8.5
-25
-25
-25
-50
-200
-220
-260
-1.05
-1.00
MAX. UNIT CONDITIONS
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
I
C
=-100 A
I
C
=-10mA*
I
E
=-100 A
V
CB
=-55V
V
EB
=-6V
V
CE
=-55V
I
C
=-0.1A, I
B
=-10mA*
I
C
=-0.5A, I
B
=-20mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1.5A, I
B
=-200mA*
I
C
=-1.5A, I
B
=-200mA*
I
C
=-1.5A, V
CE
=-5V*
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-1.5A, V
CE
=-5V*
I
C
=-3A, V
CE
=-5V*
MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
pF
ns
ns
V
CB
=-10A, f=1MHz
V
CC
=-50V, I
C
=-1A
I
B1
=I
B2
=-50mA
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
2%
ISSUE 1 - JUNE 2003
SEMICONDUCTORS
4
ZXT4M322
TYPICAL CHARACTERISTICS
0.6
0.5
25°C
0.6
0.5
I
C
/I
B
=10
V
CE
(VOLTS)
0.4
0.3
0.2
0.1
0.0
1mA
I
C
/I
B
=50
I
C
/I
B
=20
I
C
/I
B
=10
I
C
/I
B
=5
V
CE
(VOLTS)
0.4
0.3
0.2
0.1
0.0
1mA
100°C
25°C
-55°C
10mA
100mA
1A
10A
10mA
100mA
1A
10A
Collector Current
Collector Current
V
BE(SAT)
vs I
C
V
CE(SAT)
vs I
C
1.6
100°C
V
CE
=5V
1.2
I
C
/I
B
=5
Typical Gain (hFE)
Normalised Gain
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1mA
10mA
100mA
1A
10A
-55°C
25°C
1.0
V
BE
(VOLTS)
-55°C
450
0.8
25°C
0.6
0.4
0.2
0.0
1mA
100°C
225
10mA
100mA
1A
10A
Collector Current
h
FE(SAT)
vs I
C
Collector Current
V
BE(SAT)
vs I
C
1.0
10
V
CE
=5V
-55°C
25°C
SINGLE PULSE TEST T
amb
= 25 deg C
V
BE
(VOLTS)
0.8
0.6
I
C
(AMPS)
1.0
100°C
0.4
0.2
0.0
1mA
0.1
D.C.
1s
100ms
10ms
1ms
100µs
10mA
100mA
1A
10A
0.01
0.1
1
10
100
Collector Current
V
BE(ON)
vs I
C
V
CE
(VOLTS)
Safe Operating Area
ISSUE 1 - JUNE 2003
5
SEMICONDUCTORS
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