SMD Schottky Barrier Diode
CDBQR0140L-HF
I
o
= 100 mA
V
R
= 40 Volts
RoHS Device
Halogen Free
Features
-Low forward voltage.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
0.026(0.65)
0.022(0.55)
0402/SOD-923F
0.041(1.05)
0.037(0.95)
Mechanical data
-Case: 0402/SOD-923F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & B8
0.020(0.50) Typ.
0.012(0.30) Typ.
0.022(0.55)
0.018(0.45)
-Mounting position: Any.
-Weight: 0.001 gram(approx.).
Dimensions in inches and (millimeter)
Maximum Rating
(at T
A
=25 C unless otherwise noted)
O
Parameter
Repetitive Peak reverse voltage
Reverse voltage
Average forward rectified current
Forward current,surge peak
Power Dissipation
Storage temperature
Junction temperature
Conditions
Symbol Min Typ Max Unit
V
RRM
V
R
I
O
45
40
100
1
125
-40
+125
+125
V
V
mA
A
mW
O
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
I
FSM
P
D
T
STG
T
j
C
C
O
Electrical Characteristics
(at T
A
=25 C unless otherwise noted)
O
Parameter
Forward voltage
Reverse current
Capacitance between terminals
I
F
= 100mA
I
F
= 10mA
V
R
= 10V
Conditions
Symbol Min Typ Max Unit
V
F
I
R
C
T
6
0.55
0.34
30
V
uA
pF
f = 1 MHz, and 10 VDC reverse voltage
REV:B
QW-G1105
Page 1
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBQR0140L-HF)
Fig. 1 - Forward characteristics
1000
10m
1m
Fig. 2 - Reverse characteristics
Reverse current ( A )
Forward current (mA )
75 C
O
100u
10u
1u
100n
10n
100
25 C
O
C
C
C
O
10
C
O
O
O
25
75
1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
-25
12
-25 C
5
O
1n
0
10
20
30
40
Forward voltage (V)
Reverse voltage (V)
Fig. 3 - Capacitance between
terminals characteristics
Capacitance between terminals (
P
F)
15
Fig.4 - Current derating curve
Average forward current(%)
12
100
80
9
60
6
40
3
20
0
0
10
20
30
40
0
0
25
50
75
100
O
125
150
Reverse voltage (V)
Ambient temperature ( C)
REV:B
QW-G1105
Page 2
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