SMD Schottky Barrier Diode Arrays
Forward Current: 0.2A
Reverse Voltage: 30V
RoHS Device
Features
-Low forward voltage drop.
-Fast switching.
-Ultra-small surface mount package.
-PN junction guard ring for transient and ESD
protection.
-Available in lead Free version.
CDBV6-54T/AD/CD/SD/BR-G
SOT-363
0.087(2.20)
0.071(1.80)
0.053(1.35)
0.045(1.15)
Mechanical data
-Case: SOT-363, Molded Plastic
-Case material: UL 94V-0 flammability retardant
classification.
-Terminals: Solderable per MIL-STD-202, Method
208
-Marking: Orientation: See diagrams below
-Weight: 0.006 grams (approx.)
-Marking: See diagrams below
A
1
C
2
C
2
C
1
A
2
A
2
AC
1
0.044(1.10)
0.035(0.90)
0.056(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.096(2.45)
0.085(2.15)
0.014(0.35)
0.006(0.15)
0.004(0.10)max
0.010(0.25)min
Dimensions in inches and (millimeters)
C
2
A
2
AC
1
C
1
C
2
C
1
C
2
C
3
C
1
C
1
A
2
A
1
A
1
C
2
A
1
C
1
AC
2
A
1
A
2
AC
2
A
1
A
2
A
3
CDBV6-54AD-G*
Marking: KL6
CDBV6-54CD-G*
Marking: KL7
CDBV6-54SD-G*
Marking: KL8
CDBV6-54BR-G
Marking: KLB
CDBV6-54T-G
Marking: KLA
*Symmetrical
configuration, no orientation indicator.
Maximum Ratings
(at Ta=25°C unless otherwise noted)
Parameter
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward continuous current (Note 1)
Repetitive peak forward current (Note 1)
Forward surge current (Note 1)
Power dissipation (Note 1)
Thermal resistance, junction to ambient air (Note 1)
Operation and storage temperature range
@t<1.0s
Symbol
V
RRM
V
RWM
V
R
I
F
I
FRM
I
FSM
P
D
R
θJA
T
J
, T
STG
Limits
30
200
300
600
200
625
-65 ~ +125
Unit
V
mA
mA
mA
mW
O
C/W
O
C
Electrical Characteristics
(at Ta=25°C unless otherwise noted)
Parameter
Reverse breakdown voltage (Note 2)
I
R
=100μA
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
V
R
=25V
V
R
=1.0V, f=1.0MHz
I
F
=I
R
=10mA to I
R
=1.0mA, R
L
=100Ω
Conditions
Symbol Min Typ Max Unit
V
(BR)R
30
240
320
400
500
1000
2
10
5
V
Forward voltage
V
F
m
V
μ
A
pF
nS
Reverse leakage current (Note 2)
Total capacitance
Reverse recovery time
I
R
C
T
trr
Notes:
1. Device mounted on FR-4 PCB, 1×0.85×0.062 inch.
2. Short duration test pulse used to minimize self-heating effect.
REV:A
QW-BA015
Page 1
SMD Schottky Barrier Diode Arrays
ELECTRICAL CHARACTERISTIC CURVES ( CDBV6-54T/AD/CD/SD/BR-G)
Fig.1 Forward Characteristics
1
100
Fig.2 Reverse Characteristics
I
F
, Instantaneous Forward Current (A)
I
R
, Instantaneous Reverse Current (μA)
125 C
O
100m
O
C
10
T
A
=1
25
1
75 C
O
10m
T
A
=75 C
T
A
=25
O
C
T
A
=0
O
C
O
0.1
25 C
O
1m
T
A
=-40 C
O
0.01
0 C
O
0.1m
0
0.2
0.4
0.6
0.8
1.0
0.001
0
10
20
30
V
F
, Instantaneous Forward Voltage (V)
V
R
, Instantaneous Reverse Voltage (V)
Fig.3 Capacitance Between
Terminals Characteristics
100
Fig.4 Power Derating Curve
C
T
, Capacitance Between Terminals (pF)
f=1MHz
10
P
D
, Power Dissipation (mW)
0
5
10
15
20
200
100
1
25
30
0
0
24
50
75
100
125
150
V
R
, Reverse Voltage (V)
T
A
, Ambient Temperature (°C)
REV:A
QW-BA015
Page 2
Embedded System
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