CTD100, CDT100
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol
Test Conditions
Characteristic Values
15
1.74
0.85
3.2
V
D
=6V;
V
D
=6V;
T
VJ
=T
VJM
;
T
VJ
=T
VJM
;
T
VJ
=25
o
C
T
VJ
=-40
o
C
T
VJ
=25
o
C
T
VJ
=-40
o
C
V
D
=2/3V
DRM
V
D
=2/3V
DRM
1.5
1.6
100
200
0.25
10
200
150
2
typ.
185
170
45
per thyristor/diode; DC current
per module
per thyristor/diode; DC current
per module
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
0.22
0.11
0.42
0.21
12.7
9.6
50
Unit
mA
V
V
m
V
mA
V
mA
mA
mA
us
us
uC
A
K/W
K/W
mm
mm
m/s
2
I
RRM
, I
DRM
T
VJ
=T
VJM
; V
R
=V
RRM
; V
D
=V
DRM
V
T
, V
F
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a
I
T
, I
F
=300A; T
VJ
=25
o
C
For power-loss calculations only (T
VJ
=T
VJM
)
T
VJ
=25
o
C; t
p
=30us; V
D
=6V
I
G
=0.45A; di
G
/dt=0.45A/us
T
VJ
=25
o
C; V
D
=6V; R
GK
=
T
VJ
=25
o
C; V
D
=1/2V
DRM
I
G
=0.45A; di
G
/dt=0.45A/us
T
VJ
=T
VJM
; I
T
=150A; t
p
=200us; -di/dt=10A/us
V
R
=100V; dv/dt=20V/us; V
D
=2/3V
DRM
T
VJ
=T
VJM
; I
T
, I
F
=50A; -di/dt=6A/us
FEATURES
* International standard package
* Direct copper bonded Al
2
O
3
-ceramic
base plate
* Planar passivated chips
* Isolation voltage 3600 V~
* UL registered, E 72873
* Gate-cathode twin pins for version 1
APPLICATIONS
* DC motor control
* Softstart AC motor controller
* Light, heat and temperature
control
ADVANTAGES
* Space and weight savings
* Simple mounting with two screws
* Improved temperature and power
cycling
* Reduced protection circuits
DEECorp.
CTD100, CDT100
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 1 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 2 i
2
dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
10
1: I
GT
, T
VJ
= 125
o
C
V
V
G
2: I
GT
, T
VJ
= 25
o
C
3: I
GT
, T
VJ
= -40
o
C
3
1
1
4
2
5
6
4: P
GAV
= 0.5 W
I
GD
, T
VJ
= 125
o
C
0.1
10
0
10
1
10
2
5: P
GM
=
5W
6: P
GM
= 10 W
10
3
I
G
mA
10
4
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 4 Gate trigger characteristics
1000
T
VJ
= 25
o
C
s
t
gd
typ.
100
Limit
10
3 x CTD/CDT100
1
10
100
I
G
mA
1000
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 6 Gate trigger delay time
DEECorp.
CTD100, CDT100
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
3 x CTD/CDT100
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
R
thJC
for various conduction angles d:
d
DC
180
o
C
120
o
C
60
o
C
30
o
C
R
thJC
(K/W)
0.22
0.23
0.25
0.27
0.28
Constants for Z
thJC
calculation:
i
1
2
3
R
thi
(K/W)
0.0066
0.0678
0.1456
t
i
(s)
0.0019
0.0477
0.344
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
R
thJK
for various conduction angles d:
d
DC
180
o
C
120
o
C
60
o
C
30
o
C
R
thJK
(K/W)
0.42
0.43
0.45
0.47
0.48
Constants for Z
thJK
calculation:
i
1
2
3
4
R
thi
(K/W)
0.0066
0.0678
0.1456
0.2
t
i
(s)
0.0019
0.0477
0.344
1.32
DEECorp.
京公网安备 11010802033920号
EEWORLD
