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CY7C1265XV18-600BZXC

Description
QDR SRAM, 1MX36, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
Categorystorage    storage   
File Size1MB,30 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
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CY7C1265XV18-600BZXC Overview

QDR SRAM, 1MX36, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165

CY7C1265XV18-600BZXC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCypress Semiconductor
Parts packaging codeBGA
package instruction13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
Contacts165
Reach Compliance Codecompli
ECCN code3A991.B.2.A
Factory Lead Time1 week
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B165
JESD-609 codee1
length15 mm
memory density37748736 bi
Memory IC TypeQDR SRAM
memory width36
Humidity sensitivity level3
Number of functions1
Number of terminals165
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX36
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width13 mm
CY7C1263XV18
CY7C1265XV18
36-Mbit QDR
®
II+ Xtreme SRAM Four-Word
Burst Architecture (2.5 Cycle Read Latency)
36-Mbit QDR
®
II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
Features
Configurations
With Read Cycle Latency of 2.5 cycles:
CY7C1263XV18 – 2 M × 18
CY7C1265XV18 – 1 M × 36
Separate Independent Read and Write Data Ports
Supports concurrent transactions
633 MHz Clock for High Bandwidth
Four-word Burst for Reducing Address Bus Frequency
Double Data Rate (DDR) Interfaces on both Read and Write
Ports (data transferred at 1266 MHz) at 633 MHz
Available in 2.5 Clock Cycle Latency
Two Input Clocks (K and K) for precise DDR Timing
SRAM uses rising edges only
Echo Clocks (CQ and CQ) simplify Data Capture in High Speed
Systems
Data Valid Pin (QVLD) to indicate Valid Data on the Output
Single Multiplexed Address Input Bus latches Address Inputs
for Read and Write Ports
Separate Port selects for Depth Expansion
Synchronous Internally Self-timed Writes
QDR
®
II+ Xtreme operates with 2.5 cycle read latency when
DOFF is asserted HIGH
Operates similar to QDR I Device with one Cycle Read Latency
when DOFF is asserted LOW
Available in × 18 and × 36 Configurations
Full Data Coherency, providing Most Current Data
Core V
DD
= 1.8 V ± 0.1 V; I/O V
DDQ
= 1.4 V to 1.6 V
Supports 1.5 V I/O supply
HSTL Inputs and Variable Drive HSTL Output Buffers
Available in 165-ball FBGA Package (13 × 15 × 1.4 mm)
Offered in Pb-free Packages
JTAG 1149.1 compatible Test Access Port
Phase-Locked Loop (PLL) for Accurate Data Placement
Functional Description
The CY7C1263XV18, and CY7C1265XV18 are 1.8 V
Synchronous Pipelined SRAMs, equipped with QDR II+
architecture. Similar to QDR II architecture, QDR II+ architecture
consists of two separate ports: the read port and the write port to
access the memory array. The read port has dedicated data
outputs to support read operations and the write port has
dedicated data inputs to support write operations. QDR II+
architecture has separate data inputs and data outputs to
completely eliminate the need to “turnaround” the data bus that
exists with common I/O devices. Each port is accessed through
a common address bus. Addresses for read and write addresses
are latched on alternate rising edges of the input (K) clock.
Accesses to the QDR II+ Xtreme read and write ports are
completely independent of one another. To maximize data
throughput, both read and write ports are equipped with DDR
interfaces. Each address location is associated with four 18-bit
words (CY7C1263XV18), or 36-bit words (CY7C1265XV18) that
burst sequentially into or out of the device. Because data is
transferred into and out of the device on every rising edge of both
input clocks (K and K), memory bandwidth is maximized while
simplifying system design by eliminating bus “turnarounds”.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the K or K input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
For a complete list of related documentation, click
here.
Selection Guide
Description
Maximum Operating Frequency
Maximum Operating Current
× 18
× 36
633 MHz
633
1165
1660
600 MHz
600
1100
1570
Unit
MHz
mA
Cypress Semiconductor Corporation
Document Number: 001-70328 Rev. *F
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised January 3, 2018

CY7C1265XV18-600BZXC Related Products

CY7C1265XV18-600BZXC CY7C1263XV18-633BZXC
Description QDR SRAM, 1MX36, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, FBGA-165
Is it Rohs certified? conform to conform to
Maker Cypress Semiconductor Cypress Semiconductor
Parts packaging code BGA BGA
package instruction 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 LBGA, BGA165,11X15,40
Contacts 165 165
Reach Compliance Code compli compliant
ECCN code 3A991.B.2.A 3A991.B.2.A
Factory Lead Time 1 week 1 week
Other features PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE
JESD-30 code R-PBGA-B165 R-PBGA-B165
JESD-609 code e1 e1
length 15 mm 15 mm
memory density 37748736 bi 37748736 bit
Memory IC Type QDR SRAM QDR SRAM
memory width 36 18
Humidity sensitivity level 3 3
Number of functions 1 1
Number of terminals 165 165
word count 1048576 words 2097152 words
character code 1000000 2000000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C
organize 1MX36 2MX18
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LBGA LBGA
Package shape RECTANGULAR RECTANGULAR
Package form GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 260 260
Maximum seat height 1.4 mm 1.4 mm
Maximum supply voltage (Vsup) 1.9 V 1.9 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V
surface mount YES YES
technology CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form BALL BALL
Terminal pitch 1 mm 1 mm
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature 30 30
width 13 mm 13 mm

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