ZHCS2000
40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE
SUMMARY
V
R
=40V; I
C
= 2A
DESCRIPTION
A surface mount Schottky Barrier Diode featuring low forward voltage drop
suitable for high frequency rectification and reverse voltage protection.
FEATURES
•
•
•
•
•
•
•
High current capability
Low forward voltage (V
F
max=0.5V)
Fast recovery time
Small package size
SOT23-6
C
APPLICATIONS
Mobile telecomms, PCMIA & SCSI
DC-DC Conversion
High frequency rectification
ORDERING INFORMATION
DEVICE
ZHCS2000TA
ZHCS2000TC
DEVICE MARKING
ZS20
REEL SIZE
(inches)
7
13
TAPE WIDTH
(mm)
8mm embossed
8mm embossed
QUANTITY
PER REEL
3000 units
10000 units
A
C
C
A
Top View
C
C
A
ISSUE 2 - DECEMBER 2002
1
ZHCS2000
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Continuous Reverse Voltage
Forward Current
Average Peak Forward Current;D.C.=50%
Non Repetitive Forward Current t≤ 100µs
t≤ 10ms
Power Dissipation at T
amb
=25°C
Storage Temperature Range
Junction Temperature
SYMBOL
V
R
I
F
I
FAV
I
FSM
P
tot
T
stg
T
j
VALUE
40
2
4
20
10
1.1
-55 to +150
125
UNIT
V
A
A
A
A
W
°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
SYMBOL
R
θJA
R
θJA
VALUE
113
73
UNIT
°C/W
°C/W
ISSUE 2 - DECEMBER 2002
2
ZHCS2000
TYPICAL CHARACTERISTICS
+V
Negative Input Pulse
1nS Rise Time
12R5
To 50R
Scope
1nS
Rise Time
12R5
DUT
t1
D = t1 / t2
50R to 12R5
Pulse Transformer
t2
Reverse Recovery Time Circuit
Duty Cycle
ISSUE 2 - DECEMBER 2002
3
ZHCS2000
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Reverse Breakdown
Voltage
Forward Voltage
SYMBOL
V
(BR)R
V
F
MIN.
40
290
340
380
420
485
420
160
50
5.5
325
385
445
500
615
300
TYP.
MAX.
UNIT CONDITIONS.
V
mV
mV
mV
mV
mV
mV
µA
pF
ns
I
R
=1mA
I
F
=500mA*
I
F
=1000mA*
I
F
=1500mA*
I
F
=2000mA*
I
F
=3000mA*
I
F
=2000mA*,T
amb
=100°C*
V
R
=30V
f=1MHz,V
R
=25V
switched from
I
F
= 500mA to I
R
= 500mA
Measured at I
R
= 50mA
Reverse Current
Diode Capacitance
Reverse Recovery
Time
I
R
C
D
t
rr
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
ISSUE 2 - DECEMBER 2002
4
ZHCS2000
TYPICAL CHARACTERISTICS
ISSUE 2 - DECEMBER 2002
5
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