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ZMV835TC

Description
Variable Capacitance Diode, 68pF C(T), 25V, Silicon
CategoryDiscrete semiconductor    diode   
File Size67KB,2 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

ZMV835TC Overview

Variable Capacitance Diode, 68pF C(T), 25V, Silicon

ZMV835TC Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
package instructionR-PDSO-G2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage25 V
ConfigurationSINGLE
Diode Capacitance Tolerance20%
Minimum diode capacitance ratio5
Nominal diode capacitance68 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.33 W
Certification statusNot Qualified
minimum quality factor100
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40

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