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ZT93

Description
1000mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
CategoryDiscrete semiconductor    The transistor   
File Size73KB,2 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric Compare View All

ZT93 Overview

1000mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39

ZT93 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerDiodes Incorporated
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)235
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
VCEsat-Max0.5 V

ZT93 Related Products

ZT93
Description 1000mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
Is it lead-free? Contains lead
Is it Rohs certified? incompatible
Maker Diodes Incorporated
package instruction CYLINDRICAL, O-MBCY-W3
Reach Compliance Code unknow
ECCN code EAR99
Other features LOW NOISE
Maximum collector current (IC) 1 A
Collector-emitter maximum voltage 80 V
Configuration SINGLE
Minimum DC current gain (hFE) 40
JEDEC-95 code TO-39
JESD-30 code O-MBCY-W3
JESD-609 code e0
Number of components 1
Number of terminals 3
Maximum operating temperature 175 °C
Package body material METAL
Package shape ROUND
Package form CYLINDRICAL
Peak Reflow Temperature (Celsius) 235
Polarity/channel type NPN
Maximum power dissipation(Abs) 1 W
Certification status Not Qualified
Guideline CECC
surface mount NO
Terminal surface Tin/Lead (Sn/Pb)
Terminal form WIRE
Terminal location BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications SWITCHING
Transistor component materials SILICON
Nominal transition frequency (fT) 60 MHz
VCEsat-Max 0.5 V

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