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ZTX1047ASTOB

Description
Small Signal Bipolar Transistor, 4A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size157KB,4 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric Compare View All

ZTX1047ASTOB Overview

Small Signal Bipolar Transistor, 4A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN

ZTX1047ASTOB Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-W3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)4 A
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JESD-30 codeO-PBCY-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 – JANUARY 1995
FEATURES
* Very Low Saturation Voltage
* High Gain
* 4 Amp Continuous Current
APPLICATIONS
* DC-DC Convertors
* Power Management - Supply Switching
ZTX1047A
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
ZTX1047A
35
10
5
20
4
500
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
°C

ZTX1047ASTOB Related Products

ZTX1047ASTOB ZTX1047ASTZ
Description Small Signal Bipolar Transistor, 4A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN Small Signal Bipolar Transistor, 4A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN
Maker Diodes Incorporated Diodes Incorporated
Parts packaging code TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 4 A 4 A
Collector-emitter maximum voltage 10 V 10 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 60 60
JESD-30 code O-PBCY-W3 O-PBCY-W3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 200 °C 200 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface MATTE TIN MATTE TIN
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature 40 40
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz
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