800mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 STYLE, E-LINE PACKAGE-3
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Diodes Incorporated |
| package instruction | IN-LINE, R-PSIP-W3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.8 A |
| Collector-emitter maximum voltage | 25 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 100 |
| JESD-30 code | R-PSIP-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 200 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | 235 |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.75 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 200 MHz |
| VCEsat-Max | 0.7 V |
| ZTX338 | BC327P | BFS96 | BC337P | BFS98 | ZTX538 | ZTX537 | |
|---|---|---|---|---|---|---|---|
| Description | 800mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 STYLE, E-LINE PACKAGE-3 | 800mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 STYLE, E-LINE PACKAGE-3 | 1000mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 STYLE, E-LINE PACKAGE-3 | 800mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 STYLE, E-LINE PACKAGE-3 | 1000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 STYLE, E-LINE PACKAGE-3 | 800mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 STYLE, E-LINE PACKAGE-3 | 800mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 STYLE, E-LINE PACKAGE-3 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| package instruction | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 |
| Reach Compliance Code | unknow | unknown | unknown | unknown | unknown | unknow | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.8 A | 0.8 A | 1 A | 0.8 A | 1 A | 0.8 A | 0.8 A |
| Collector-emitter maximum voltage | 25 V | 45 V | 30 V | 45 V | 60 V | 25 V | 45 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 100 | 100 | 40 | 100 | 40 | 100 | 100 |
| JESD-30 code | R-PSIP-W3 | R-PSIP-W3 | R-PSIP-W3 | R-PSIP-W3 | R-PSIP-W3 | R-PSIP-W3 | R-PSIP-W3 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Peak Reflow Temperature (Celsius) | 235 | 235 | 235 | 235 | 235 | 235 | 235 |
| Polarity/channel type | NPN | PNP | PNP | NPN | PNP | PNP | PNP |
| Maximum power dissipation(Abs) | 0.75 W | 0.625 W | 0.5 W | 0.625 W | 0.5 W | 0.75 W | 0.75 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 200 MHz | 100 MHz | 150 MHz | 100 MHz | 150 MHz | 200 MHz | 200 MHz |
| VCEsat-Max | 0.7 V | 0.7 V | 0.35 V | 0.7 V | 0.35 V | 0.7 V | 0.7 V |