PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 140 Volt V
CEO
* Gain of 250 at I
C
=0.2 Amps
* Very low saturation voltage
ZTX795A
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation
at T
amb
=25°C
derate above 25°C
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
totp
P
tot
T
j:
T
stg
-140
-140
-5
-1
-0.5
1.5
1
5.7
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
W
mW/°C
°C
Operating and Storage Temperature Range
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
300
250
100
3-285
-0.75
800
MIN.
-140
-140
-5
-0.1
-0.1
-0.3
-0.3
-0.25
-0.95
TYP.
MAX.
UNIT
V
V
V
µ
A
µ
A
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-100V
V
EB
=-4V
I
C
=-100mA, I
B
=-1mA*
I
C
=-200mA, I
B
=-5mA*
I
C
=-500mA, I
B
=-50mA*
I
C
=-500mA, I
B
=-50mA*
IC=-500mA, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V*
I
C
=-200mA, V
CE
=-2V*
I
C
=-300mA, V
CE
=-2V*
V
V
V
V
V
ZTX795A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
SYMBOL
f
T
C
ibo
C
obo
t
on
t
off
MIN.
100
225
15
100
1900
TYP.
MAX.
UNIT
MHz
pF
pF
ns
ns
CONDITIONS.
I
C
=-50mA, V
CE
=-5V
f=50MHz
V
EB
=-0.5V, f=1MHz
V
CB
=-10V, f=1MHz
I
C
=-100mA, I
B1
=-10mA
I
B2
=-10mA, V
CC
=-50V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance Junction to Ambient
1
Junction to Ambient
2
Junction to Case
SYMBOL
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
MAX.
175
116
70
UNIT
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
200
Max Power Dissipation - (Watts)
Thermal Resistance (°C/W)
D=1 (D.C.)
2.0
t
1
D=t
1
/t
P
t
P
C
1.5
as
e
te
m
pe
1.0
Am
ra
100
D=0.5
bie
tu
nt t
re
em
0.5
0
per
at u
re
D=0.2
D=0.1
Single Pulse
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0
0.0001
0.001
0.01
0.1
1
10
100
T -Temperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-286
Embedded System
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