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ZXM64P03X

Description
2400mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MSOP-8
CategoryDiscrete semiconductor    The transistor   
File Size39KB,1 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
Download Datasheet Parametric View All

ZXM64P03X Overview

2400mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MSOP-8

ZXM64P03X Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes Incorporated
package instructionSMALL OUTLINE, R-PDSO-G8
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)2.4 A
Maximum drain-source on-resistance0.09 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON

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