8M824S60CB datasheet, PDF - EEWORLD Datasheet

8M824S60CB: DescriptionSB-32, Tube; Categorystorage storage; File Size366KB，6 Pages; ManufacturerIDT (Integrated Device Technology)

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8M824S60CB Overview

SB-32, Tube

Parameter Name	Attribute value
Brand Name	Integrated Device Technology
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Parts packaging code	SB
package instruction	DIP, DIP32,.6
Contacts	32
Manufacturer packaging code	SB32
Reach Compliance Code	_compli
ECCN code	3A001
Maximum access time	60 ns
I/O type	COMMON
JESD-30 code	R-XDIP-T32
JESD-609 code	e0
memory density	1048576 bi
Memory IC Type	SRAM MODULE
memory width	8
Humidity sensitivity level	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum standby current	0.08 A
Minimum standby current	4.5 V
Maximum slew rate	0.265 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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