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BA157

Description
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size136KB,2 Pages
ManufacturerTransys Electronics Limited
Websitehttp://www.transyselectronics.com
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BA157 Overview

1 A, 400 V, SILICON, SIGNAL DIODE, DO-41

BA157 THRU BA159
FAST SWITCHING PLASTIC RECTIFIER
VOLTAGE - 400 to 1000 Volts CURRENT - 1.0 Ampere
FEATURES
l
l
High surge current capability
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing
Flame Retardant Epoxy Molding Compound
l
l
l
l
Void-free Plastic in a DO-41 package
1.0 ampere operation at T
A
=55 with no thermal runaway
Fast switching for high efficiency
Exceeds environmental standards of MIL-S-19500/228
DO-41
MECHANICAL DATA
Case: Molded plastic, DO-41
Terminals: Axial leads, solderable per MIL-STD-202,
Method 208
Polarity: Band denotes cathode
Mounting Position: Any
Weight: 0.012 ounce, 0.3 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) lead length at T
A
=55
Peak Forward Surge Current 8.3ms single half
sine
wave superimposed on rated load(JECEC method)
Maximum Forward Voltage at 1.0A
Maximum Reverse Current T
J
=25
at Rated DC Blocking Voltage T
J
=100
Typical Junction capacitance (Note 1)
Maximum Reverse Recovery Time(Note 2)
Operating and Storage Temperature Range
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, I
rr
=.25A
BA157
400
280
400
BA158
600
420
600
1.0
30
BA159
1000
700
1000
UNITS
V
V
V
A
A
1.3
5.0
500
12
150
-55 to +150
250
V
A
P
F
ns

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BA157 BA158 BA159
Description 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
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