BA159G datasheet, PDF - EEWORLD Datasheet

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BA159G: Description1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41; CategoryDiscrete semiconductor diode; File Size49KB，2 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn; Environmental Compliance

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BA159G Overview

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41

BA159G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	LRC
package instruction	O-PALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JEDEC-95 code	DO-41
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	20 A
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-50 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	1000 V
Maximum reverse recovery time	0.5 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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LESHAN RADIO COMPANY, LTD.

BA157G – BA159G

FAST GPP DIODES

Maximum Average

TYPE

Maximum

Peak Reverse

Voltage

PRV

V

PK

Maximum

Reverse

Current @ PRV

@ T

A

=25ºC

I

R

Maximum

Forward

Voltage

@ T

A

=25ºC

I

FM

A

PK

V

FM

V

PK

Maximum

Reverse

Recovery Time

Trr

ns

Package

Dimensions

Rectified Current

Forward Peak

@ Half-Wave

Surge Current @

Resistive Load 60Hz 8.3ms Superimposed

I

O

@ T

L

A

AV

ºC

I

FM

(Surge)

A

PK

µAdc

BA157G

BA158G

BA159DG

BA159G

400

600

800

1000

1.0

55

20

5.0

1.0

1.3

150

250

500

DO – 41

Trr

I

F

= 0.5A, I

R

= 1.0A, I

RR

= 0.25A

Trr Test Conditions: I

F

= 0.5A, I

R

= 1.0A, I

RR

= 0.25A

1.0(25.4)

MIN

.205(5.2)

.166(4.2)

1.0(25.4)

MIN

.034(0.9)

.028(0.7)

DIA

.107(2.7) DIA

.080(2.0)

DO – 41

35A–1/2

BA159G Related Products

	BA159G	BA157G	BA158G
Description	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
Maker	LRC	LRC	LRC
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V	1.3 V	1.3 V
JEDEC-95 code	DO-41	DO-41	DO-41
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	20 A	20 A	20 A
Number of components	1	1	1
Number of terminals	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C
Minimum operating temperature	-50 °C	-50 °C	-50 °C
Maximum output current	1 A	1 A	1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	1000 V	400 V	600 V
Maximum reverse recovery time	0.5 µs	0.15 µs	0.25 µs
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL

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