MOSFET
Comchip
SMD Diode Specialist
CJ3404-HF
(N-Channel )
Reverse Voltage: 30 Volts
Forward Current: 5.8 A
RoHS Device
Halogen Free
Features
-N-Channel
-Enhancement mode field effect transistor.
-Use advanced trench technology to provide
excellent rds(on) and low gate charge
-This device is suitable for use as a load switch or in
PWM applications.
0.118(3.00)
0.110(2.80)
SOT-23
3
0.055(1.40)
0.047(1.20)
1
0.079(2.00)
0.071(1.80)
2
Mechanical data
-Case: SOT-23, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
0.041(1.05)
0.035(0.90)
0.007(0.150)
0.002(0.080)
0.100(2.55)
0.089(2.25)
Circuit diagram
D
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
G
S
Maximum Ratings and Electrical Characteristics
(at Ta=25 °C unless otherwise noted)
Parameter
Maximum drain-source voltage
Maximum gate-source voltage
Maximum continuous drain current
Maximum pulsed drain current*
Maximum power dissipation
Thermal resistance from Junction to ambient (t<5s)
Junction temperature
Storage temperature
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature.
REV: A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
ΘJA
T
J
T
STG
Value
30
±20
5.8
30
350
357
150
-55 to +150
Units
V
V
A
A
W
°C/W
°C
°C
QW-JTR05
Page 1
Comchip Technology CO., LTD.
MOSFET
RATING AND CHARACTERISTIC CURVES (CJ3404-HF)
Fig.1 - Output Characteristics
22
Ta=25°C
Comchip
SMD Diode Specialist
Fig.2 -
Transfer Characteristics
3.0
Ta=25°C
20
10V
6V
V
GS
=4.5V
V
GS
=4.0V
2.5
Dran Current,I
D
(A)
15
Drain Current,I
D
(A)
5
2.0
V
GS
=3.5V
1.5
10
1.0
5
V
GS
=3.0V
0.5
0
0
1
2
3
4
0.0
1.3 1.5
2.0
2.5
3.0
3.5
4.0
Drain to Soruce Voltage, V
DS
(A)
Gate to Source Voltage,V
GS
(V)
Fig.3 - R
DS(ON)
— I
D
60
70
Fig.4- R
DS(ON)
— V
GS
Ta=25°C
ON-Resistance, R
DS(ON)
( mΩ )
ON-Resistance, R
DS(ON)
( mΩ )
50
V
GS
=4.5V
60
40
50
30
V
GS
=10V
40
I
D
=2.8A
I
D
=3.6A
20
10
Ta=25°C
30
0
0
2
4
6
8
10
20
3
4
5
6
7
8
9
10
Drain Current,I
D
(A)
Gate to Source Voltage,V
GS
(V)
Fig.5 - I
S
— V
SD
10
1
Source Current, Is ( A )
0.1
0.01
1E-3
1E-4
1E-5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Source to Drain Voltage,V
SD
(V)
REV: A
QW-JTR05
Page 2
Comchip Technology CO., LTD.
MOSFET
Reel Taping Specification
d
P0
P1
Comchip
SMD Diode Specialist
B
SYMBOL
A
3.15
±
0.10
0.124
±
0.004
B
2.77
±
0.10
0.109
±
0.004
C
1.22
±
0.10
0.048
±
0.004
d
1.50
+
0.10
0.059
+
0.004
F
D
178
±
2.0
7.008
±
0.079
E
D
1
54.40
±
1.0
2.142
±
0.039
D
2
13.00
±
1.0
0.512
±
0.039
SOT-23
(mm)
(inch)
SYMBOL
E
1.75
±
0.10
0.069
±
0.004
F
3.50
±
0.05
0.138
±
0.002
P
4.00
±
0.10
0.158
±
0.004
P
0
4.00
±
0.10
0.158
±
0.004
P
1
2.00
±
0.10
W
8.00
+
0.30 /
–0.10
W
1
9.50
±
1.00
SOT-23
(mm)
(inch)
0.079
±
0.004
0.315
+
0.012 /
–0.004
0.374
±
0.039
REV: A
QW-JTR05
Page 3
Comchip Technology CO., LTD.
MOSFET
Marking Code
3
Part Number
CJ3404-HF
Marking Code
R4
Comchip
SMD Diode Specialist
XX
1
2
xxx = Product type marking code
Suggested PAD Layout
SOT-23
SIZE
(mm)
A
B
C
D
0.80
1.90
2.02
2.82
(inch)
0.031
C
0.075
0.080
0.111
B
D
A
Standard Packaging
Case Type
SOT-23
Qty Per Reel
(Pcs)
3,000
Reel Size
(inch)
7
REV: A
QW-JTR05
Page 4
Comchip Technology CO., LTD.
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