UNISONIC TECHNOLOGIES CO., LTD
2N60K
2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
2N60K
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* R
DS(ON)
< 6.5Ω@V
GS
= 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (C
RSS
= typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
1
G
G
G
G
G
G
G
G
G
Pin Assignment
2
D
D
D
D
D
D
D
D
D
3
S
S
S
S
S
S
S
S
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Box
Bulk
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
2N60KL-TA3-T
2N60KG-TA3-T
TO-220
2N60KL-TF3-T
2N60KG-TF3-T
TO-220F
2N60KL-TF1-T
2N60KG-TF1-T
TO-220F1
2N60KL-TNS-T
2N60KG-TNS-T
TO-251S
2N60KL-TN3-T
2N60KG-TN3-T
TO-252
2N60KL-TN3-R
2N60KG-TN3-R
TO-252
2N60KL-T92-B
2N60KG-T92-B
TO-92
2N60KL-T92-K
2N60KG-T92-K
TO-92
2N60KL-T92-R
2N60KG-T92-R
TO-92
Note: Pin Assignment: G: Gate D: Drain S: Source
2N60KL-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Free
(1) T: Tube, R: Tape Reel, K: Bulk, B: Tape Box
(2) TA3: TO-220, TF3: TO-220F, TF1: TO-220F1
TMS: TO-251S, TN3: TO-252, T92: TO-92
(3) L: Lead Free, G: Halogen Free
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2N60K
ABSOLUTE MAXIMUM RATINGS
(
T
C
=25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
2.0
A
2.0
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
8.0
A
50
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
4.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
54
W
TO-220
TO-220F/TO-220F1
23
W
Power Dissipation
P
D
(T
C
=25°С)
TO-251S/TO-252
44
W
TO-92
2.3
W
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L=25mH, I
AS
=2.0A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
4. I
SD
≤2.4A,
di/dt≤200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
PACKAGE
TO-220/TO-220F
TO-220F1
TO-251S/TO-252
TO-92
TO-220
TO-220F1/TO-220F
TO-251S/TO-252
TO-92
SYMBOL
θ
JA
RATINGS
62.5
100
85
2.32
5.5
2.87
54
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
Junction to Ambient
Junction to Case
θ
Jc
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QW-R502-819.C
2N60K
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Power MOSFET
MIN TYP MAX UNIT
V
10
μA
100
μA
100 nA
-100 nA
V/°С
4.0
6.5
350
50
7
30
40
50
40
11
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
V
GS
= 0V, I
D
= 250μA
600
V
DS
= 600V, V
GS
= 0V
Drain-Source Leakage Current
I
DSS
V
DS
= 480V, T
C
=125°С
Forward
V
GS
= 30V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30V, V
DS
= 0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
I
D
=250μA, Referenced to 25°C
0.4
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
=1A
6
DYNAMIC CHARACTERISTICS
270
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
40
f =1MHz
Reverse Transfer Capacitance
C
RSS
5
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D (ON)
10
Turn-On Rise Time
t
R
25
V
DD
=300V, I
D
=2.4A,
R
G
=25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
20
Turn-Off Fall Time
t
F
25
9.0
Total Gate Charge
Q
G
V
DS
=480V, V
GS
=10V,
Gate-Source Charge
Q
GS
4.3
I
D
=2.4A (Note 1, 2)
Gate-Drain Charge
Q
GD
1.6
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
SD
= 2.0 A
Continuous Drain-Source Current
I
SD
Pulsed Drain-Source Current
I
SM
180
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
SD
= 2.4A,
di/dt = 100 A/μs (Note1)
Reverse Recovery Charge
Q
RR
0.72
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
1.4
2.0
8.0
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QW-R502-819.C
2N60K
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-819.C
2N60K
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
itching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-819.C
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