®
STPS1545D/F/FP/R/G
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
F
(max)
15 A
45 V
175 °C
0.57 V
A
K
A
K
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
INSULATED
PACKAGE:
ISOWATT220AC,
TO-220FPAC
Insulating voltage = 2000V DC
Capacitance = 12pF
AVALANCHE CAPABILITY SPECIFIED
s
s
s
s
s
TO-220AC
STPS1545D
TO-220FPAC
STPS1545FP
A
K
A
A
K
DESCRIPTION
Single chip Schottky rectifier suited for Switch
Mode Power Supply and high frequency DC to DC
converters.
Packaged in TO-220AC, ISOWATT220AC,
TO-220FPAC, I
2
PAK or D
2
PAK, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
RMS forward current
Average forward current
δ
= 0.5
Parameter
Repetitive peak reverse voltage
I
2
PAK
STPS1545R
K
ISOWATT220AC
STPS1545F
A
NC
D PAK
STPS1545G
2
Value
45
30
Unit
V
A
A
TO-220AC,
I
2
PAK, D
2
PAK
ISOWATT220AC
TO-220FPAC
Tc = 155°C
Tc = 130°C
15
I
FSM
I
RRM
I
RSM
P
ARM
T
stg
Tj
dV/dt
* :
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
tp = 10 ms Sinusoidal
tp = 2 µs square F = 1kHz
tp = 100 µs square
tp = 1µs
Tj = 25°C
220
1
3
6000
- 65 to + 175
175
10000
A
A
A
W
°C
°C
V/µs
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
dPtot
1
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth
(
j
−
a
)
1/7
July 2003 - Ed: 5F
STPS1545D/F/FP/R/G
THERMAL RESISTANCES
Symbol
R
th (j-c)
Junction to case
Parameter
TO-220AC, I
2
PAK,
D
2
PAK
ISOWATT220AC
TO-220FPAC
STATIC ELECTRICAL CHARACTERISTICS
Symbol
I
R
*
V
F
*
Parameter
Reverse leakage current
Forward voltage drop
Tests Conditions
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Pulse test :
* tp = 380 µs,
δ
< 2%
Value
1.6
4.0
Unit
°C/W
Min.
Typ.
11
Max.
200
40
0.57
0.84
0.72
Unit
µA
mA
V
V
R
= V
RRM
I
F
= 15 A
I
F
= 30 A
I
F
= 30 A
0.65
0.5
To evaluate the conduction losses use the following equation :
P = 0.42 x I
F(AV)
+ 0.01 I
F2(RMS)
Fig. 1:
Average forward power dissipation versus
average forward current.
PF(av)(W)
12
10
8
6
4
2
IF(av) (A)
0
0
2
4
6
8
10
12
δ
=tp/T
tp
T
Fig. 2:
Average current
temperature (δ = 0.5).
IF(av)(A)
versus
ambient
δ
= 0.1
δ
= 0.05
δ
= 0.2
δ
= 0.5
δ
=1
14
16
18
18
16
14
12
10
8
6
4
2
0
Rth(j-a)=Rth(j-c)
TO-220AC
ISOWATT220AC
Rth(j-a)=15°C/W
T
δ
=tp/T
tp
Tamb(°C)
50
75
100
125
150
175
0
25
Fig. 3:
Normalized avalanche power derating
versus pulse duration.
P
ARM
(t
p
)
P
ARM
(1µs)
1
Fig. 4:
Normalized avalanche power derating
versus junction temperature.
P
ARM
(t
p
)
P
ARM
(25°C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
0.01
0.1
1
t
p
(µs)
10
100
1000
T
j
(°C)
0
0
25
50
75
100
125
150
2/7
STPS1545D/F/FP/R/G
Fig. 5-1:
Non repetitive surge peak forward cur-
rent versus overload duration (maximum values)
(TO-220AC, I
2
PAK and D
2
PAK).
IM(A)
200
180
160
140
120
100
80
60
I
M
40
20
0
1E-3
Fig. 5-2:
Non repetitive surge peak forward cur-
rent versus overload duration (maximum values)
(ISOWATT220AC, TO-220FPAC).
IM(A)
120
100
80
Tc=75°C
Tc=100°C
Tc=125°C
60
40
I
M
Tc=75°C
Tc=100°C
Tc=125°C
t
20
t(s)
1E-2
1E-1
1E+0
t
δ
=0.5
δ
=0.5
t(s)
1E-2
1E-1
1E+0
0
1E-3
Fig. 6-1:
Relative variation of thermal transient im-
pedance junction to case versus pulse duration
(TO-220AC, I
2
PAK and D
2
PAK).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6
0.4
T
δ
= 0.5
Fig. 6-2:
Relative variation of thermal transient im-
pedance junction to case versus pulse duration
(ISOWATT220AC, TO-220FPAC).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6
0.4
δ
= 0.5
0.2
δ
= 0.2
δ
= 0.1
Single pulse
0.2
tp(s)
1E-2
δ
=tp/T
tp
δ
= 0.2
δ
= 0.1
Single pulse
T
tp(s)
1E-1
0.0
1E-4
1E-3
1E-1
1E+0
0.0
1E-3
δ
=tp/T
tp
1E-2
1E+0
1E+1
Fig. 7:
Reverse leakage current versus reverse
voltage applied (typical values).
IR(µA)
5E+4
Tj=150°C
Fig. 8:
Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
2000
F=1MHz
Tj=25°C
1E+4
1E+3
Tj=125°C
1000
Tj=100°C
Tj=75°C
500
1E+2
1E+1
1E+0
Tj=50°C
Tj=25°C
200
VR(V)
30
35
40
45
VR(V)
0
5
10
15
20
25
100
1
2
5
10
20
50
3/7
STPS1545D/F/FP/R/G
Fig. 9:
Forward voltage drop versus forward
current (maximum values).
IFM(A)
100.0
Typical values
Tj=125°C
Tj=25°C
Fig. 10:
Thermal resistance junction to ambient
versus copper surface under tab (epoxy printed
circuit board FR4, Cu=35µm) (D
2
PAK).
80
70
60
50
40
30
20
10
Rth(j-a) (°C/W)
10.0
Tj=125°C
1.0
VFM(V)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
S(Cu) (cm²)
0
5
10
15
20
25
30
35
40
PACKAGE MECHANICAL DATA
TO-220FPAC
REF.
DIMENSIONS
Millimeters
A
H
B
Inches
Min.
Max.
0.173
0.181
0.098
0.106
0.098
0.108
0.018
0.027
0.030
0.039
0.045
0.067
0.195
0.205
0.094
0.106
0.393
0.409
0.63 Typ.
1.126
1.205
0.386
0.417
0.114
0.142
0.626
0.646
0.354
0.366
0.118
0.126
Dia
L6
L2
L3
L5
D
F1
L4
L7
F
G1
G
E
A
B
D
E
F
F1
G
G1
H
L2
L3
L4
L5
L6
L7
Dia.
Min.
Max.
4.4
4.6
2.5
2.7
2.5
2.75
0.45
0.70
0.75
1
1.15
1.70
4.95
5.20
2.4
2.7
10
10.4
16 Typ.
28.6
30.6
9.8
10.6
2.9
3.6
15.9
16.4
9.00
9.30
3.00
3.20
4/7
STPS1545D/F/FP/R/G
PACKAGE MECHANICAL DATA
ISOWATT220AC
A
H
B
DIMENSIONS
REF.
A
B
D
L7
Millimeters
Min.
Typ.
Max.
4.60
2.70
2.75
0.70
1.00
1.70
5.20
16.00
28.60
15.90
9.00
3.00
30.60 1.125
16.40 0.626
9.30
3.20
0.354
0.118
Min.
0.173
0.098
0.094
0.016
0.030
0.045
0.195
4.40
2.50
2.40
0.40
0.75
1.15
4.95
10.00
Inches
Typ.
Max.
0.181
0.106
0.108
0.028
0.039
0.067
0.205
0.409
0.630
1.205
0.646
0.366
0.126
L6
L2
L3
Diam
E
F
F1
G
H
L2
L3
L6
F1
10.40 0.394
F
G
D
E
L7
Diam
PACKAGE MECHANICAL DATA
I²PAK
REF.
Min.
A
E
L2
c2
DIMENSIONS
Millimeters
Max.
4.60
2.69
0.93
1.17
1.17
0.60
1.36
9.35
2.70
10.4
13.6
3.78
1.40
Inches
Min.
0.173
0.098
0.028
0.044
0.044
0.018
0.048
0.352
0.094
0.394
0.516
0.137
0.050
Max.
0.181
0.106
0.037
0.046
0.046
0.024
0.054
0.368
0.106
0.409
0.535
0.149
0.055
A
A1
b
b1
b2
c
c2
4.40
2.49
0.70
1.14
1.14
0.45
1.23
8.95
2.40
10.0
13.1
3.48
1.27
D
L1
b2
L
b1
b
e
A1
D
e
E
L
c
L1
L2
5/7
Embedded System
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