TIC216 SERIES
SILICON TRIACS
●
●
●
●
●
Sensitive Gate Triacs
6 A RMS
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I
GT
of 5 mA (Quadrants 1 - 3)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
TIC216D
Repetitive peak off-state voltage (see Note 1)
TIC216M
TIC216S
TIC216N
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
Peak on-state surge current full-sine-waveat (or below) 25°C case temperature (see Note 3)
Peak gate current
Peak gate power dissipation at (or below) 85°C case temperature (pulse width
≤
200
µs)
Average gate power dissipation at (or below) 85°C case temperature (see Note 4)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
T(RMS)
I
TSM
I
GM
P
GM
P
G(AV)
T
C
T
stg
T
L
V
DRM
SYMBOL
VALUE
400
600
700
800
6
60
±1
2.2
0.9
-40 to +110
-40 to +125
230
A
A
A
W
W
°C
°C
°C
V
UNIT
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 150 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature (unless otherwise noted )
PARAMETER
I
DRM
Repetitive peak
off-state current
Gate trigger
current
V
D
= rated V
DRM
V
supply
= +12 V†
I
GT
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= -12 V†
TEST CONDITIONS
I
G
= 0
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
T
C
= 110°C
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
MIN
TYP
MAX
±2
5
-5
-5
10
mA
UNIT
mA
† All voltages are with respect to Main Terminal 1.
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
TIC216 SERIES
SILICON TRIACS
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
V
supply
= +12 V†
V
GT
Gate trigger
voltage
On-state voltage
Holding current
Latching current
Critical rate of rise of
off-state voltage
Critical rise of
commutation voltage
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= -12 V†
V
T
I
H
I
L
dv/dt
dv/dt
(c)
I
T
= ±8.4 A
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= +12 V†
V
supply
= -12 V†
V
DRM
= Rated V
DRM
V
DRM
= Rated V
DRM
TEST CONDITIONS
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
R
L
= 10
Ω
I
G
= 50 mA
I
G
= 0
I
G
= 0
(see Note 6)
I
G
= 0
I
TRM
= ±8.4 A
T
C
= 110°C
T
C
= 70°C
±2
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
t
p(g)
> 20
µs
(see Note 5)
Init’ I
TM
= 100 mA
Init’ I
TM
= -100 mA
4
-2
±20
±5
MIN
TYP
MAX
2.2
-2.2
-2.2
3
±1.7
30
-30
V
mA
mA
V/µs
V/µs
V
UNIT
† All voltages are with respect to Main Terminal 1.
NOTES: 5. This parameter must be measured using pulse techniques, t
p
=
≤
1 ms, duty cycle
≤
2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R
G
= 100
Ω,
t
p(g)
= 20
µs,
t
r
=
≤
15 ns, f = 1 kHz.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
2.5
62.5
UNIT
°C/W
°C/W
2
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
TIC216 SERIES
SILICON TRIACS
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO-220
4,70
4,20
ø
3,96
3,71
10,4
10,0
2,95
2,54
6,6
6,0
15,32
14,55
1,32
1,23
18,0 TYP.
6,1
5,6
0,97
0,66
1
2
3
1,47
1,07
14,1
12,7
2,74
2,34
5,28
4,68
2,90
2,40
0,64
0,41
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE
A: The centre pin is in electrical contact with the mounting tab.
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
Embedded System
京公网安备 11010802033920号
EEWORLD
