Philips Semiconductors
Product specification
High-speed diodes
FEATURES
•
Hermetically sealed leaded glass
SOD27 (DO-35) package
•
High switching speed: max. 4 ns
•
General application
•
Continuous reverse voltage: 10 V,
30 V, 50 V
•
Repetitive peak reverse voltage:
max. 15 V, 40 V, 60 V
•
Repetitive peak forward current:
max. 225 mA.
The diodes are type branded.
handbook, halfpage
k
BA316; BA317; BA318
DESCRIPTION
The BA316, BA317, BA318 are high-speed switching diodes fabricated in
planar technology, and encapsulated in hermetically sealed leaded glass
SOD27 (DO-35) packages.
a
MAM246
APPLICATIONS
•
High-speed switching.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
BA316
BA317
BA318
V
R
continuous reverse voltage
BA316
BA317
BA318
I
F
I
FRM
I
FSM
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 1 ms
t=1s
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
4
1
0.5
350
+200
200
A
A
A
mW
°C
°C
see Fig.2; note 1
−
−
−
−
−
10
30
50
100
225
V
V
V
mA
mA
PARAMETER
repetitive peak reverse voltage
CONDITIONS
MIN.
−
−
−
−
15
40
60
V
V
V
MAX.
UNIT
1996 Sep 03
2
Philips Semiconductors
Product specification
High-speed diodes
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
R
reverse current
BA316
BA317
see Fig.5
V
R
= 10 V
V
R
= 10 V; T
j
= 150
°C
V
R
= 10 V
V
R
= 30 V
V
R
= 30 V; T
j
= 150
°C
BA318
V
R
= 30 V
V
R
= 50 V
V
R
= 50 V; T
j
= 150
°C
C
d
t
rr
diode capacitance
reverse recovery time
f = 1 MHz; V
R
= 0; see Fig.6
CONDITIONS
BA316; BA317; BA318
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
MAX.
700
850
1100
200
100
50
200
100
50
200
100
2
4
UNIT
mV
mV
mV
nA
µA
nA
nA
µA
nA
nA
µA
pF
ns
when switched from I
F
= 10 mA to
I
R
= 60 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA; see Fig.7
when switched from I
F
= 50 mA;
t
r
= 20 ns; see Fig.8
V
fr
forward recovery voltage
−
2.5
V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a printed circuit-board without metallization pad.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length 10 mm
lead length 10 mm; note 1
VALUE
240
500
UNIT
K/W
K/W
1996 Sep 03
3
Philips Semiconductors
Product specification
High-speed diodes
GRAPHICAL DATA
BA316; BA317; BA318
handbook, halfpage
200
MBG452
handbook, halfpage
300
MBG465
IF
(mA)
IF
(mA)
200
(1)
(2)
(3)
100
100
0
0
100
Tamb (
o
C)
200
0
0
(1) T
j
= 175
°C;
typical values.
1
VF (V)
2
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBG704
10
1
10
−1
1
10
10
2
10
3
tp (µs)
10
4
Based on square wave currents.
T
j
= 25
°C
prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 03
4
Philips Semiconductors
Product specification
High-speed diodes
BA316; BA317; BA318
10
3
handbook, halfpage
IR
(µA)
MGD008
MGD004
handbook, halfpage
1.2
10
2
Cd
(pF)
1.0
10
0.8
1
10
−1
0.6
10
−2
0
100
Tj ( C)
o
200
0.4
0
10
VR (V)
20
V
R
= V
Rmax
.
Solid line; maximum values.
Dotted line; typical values.
f = 1 MHz; T
j
= 25
°C.
Fig.5
Reverse current as a function of junction
temperature.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 03
5
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