D40C2 datasheet, PDF - EEWORLD Datasheet

D40C2: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size374KB，4 Pages; ManufacturerCentral Semiconductor

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D40C2 Overview

Transistor

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Reach Compliance Code	_compli
Maximum collector current (IC)	0.5 A
Configuration	DARLINGTON
Minimum DC current gain (hFE)	40000
JESD-609 code	e0
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1.67 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	75 MHz

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	D40C2	2N5306A	2N5307	2N5308A	2N5305	GES5307	GES5308	GES5308A	D40C8
Description	Transistor	Transistor,	Small Signal Bipolar Transistor, 0.3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-98, TO-98, 3 PIN	Transistor	Transistor	Transistor	Transistor	Transistor	Transistor
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	_compli	_compli	_compli	_compli	_compli	not_compliant	not_compliant	not_compliant	_compli
Maximum collector current (IC)	0.5 A	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A	0.5 A
Configuration	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	40000	7000	2000	7000	2000	2000	7000	7000	40000
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	75 MHz	60 MHz	60 MHz	60 MHz	60 MHz	50 MHz	50 MHz	50 MHz	75 MHz
Maker	Central Semiconductor	-	-	-	-	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
Maximum power dissipation(Abs)	1.67 W	-	-	-	-	0.4 W	0.4 W	0.4 W	6.2 W

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