DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D050
BA481
UHF mixer diode
Product specification
File under Discrete Semiconductors, SC01
1996 Mar 19
Philips Semiconductors
Product specification
UHF mixer diode
FEATURES
•
Low forward voltage
•
Hermetically-sealed leaded glass
package
•
Low diode capacitance.
APPLICATIONS
•
UHF mixer
•
Sampling circuits
•
Modulators
•
Phase detection.
Cathode indicated by a grey band.
k
handbook, halfpage
a
BA481
DESCRIPTION
Planar Schottky barrier diode encapsulated in a hermetically-sealed
subminiature SOD68 (DO-34) glass package. The diode is suitable for
mounting on a 2 E (5.08 mm) pitch.
MAM193
Fig.1 Simplified outline (SOD68; DO-34), and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
PARAMETER
−
−
−65
−
MIN.
4
30
+125
100
MAX.
V
mA
°C
°C
UNIT
1996 Mar 19
2
Philips Semiconductors
Product specification
UHF mixer diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
forward voltage
PARAMETER
see Fig.2
I
F
= 1 mA
I
F
= 10 mA
I
R
r
s
F
C
d
Note
1. The local oscillator is adjusted for a diode current of 2 mA.
IF amplifier noise F
if
= 1.5 dB; f = 35 MHz.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOD68 standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
320
reverse current
series resistance
noise figure
diode capacitance
V
R
= 4 V; see Fig.3
f = 1 kHz; I
F
= 5 mA
f = 900 MHz; note 1
f = 1 MHz; V
R
= 0 V; see Fig.4
450
600
10
13
8
1.1
CONDITIONS
MAX.
BA481
UNIT
mV
mV
µA
µA
Ω
dB
pF
V
R
= 4 V; T
amb
= 60
°C;
see Fig.3 100
UNIT
KW
1996 Mar 19
3
Philips Semiconductors
Product specification
UHF mixer diode
GRAPHICAL DATA
10
2
handbook, halfpage
I
F
(mA)
10
(1)
(2)
(3)
(4)
MGC684
BA481
10
4
handbook, halfpage
IR
(nA)
(1)
MGC685
10
3
10
2
(2)
(3)
10
1
(4)
1
10
−1
0
0.2
0.4
0.6
VF (V)
0.8
(1)
(2)
(3)
(4)
10
−1
0
1
2
3
VR (V)
4
(1)
(2)
(3)
(4)
T
amb
= 100
°C.
T
amb
= 60
°C.
T
amb
= 25
°C.
T
amb
=
−40 °C.
T
amb
= 100
°C.
T
amb
= 60
°C.
T
amb
= 25
°C.
T
amb
=
−40 °C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
1.00
d
(pF)
C
MGC683
0.75
0.50
0.25
0
1
2
3
VR (V)
4
f = 1 MHz.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
1996 Mar 19
4
Philips Semiconductors
Product specification
UHF mixer diode
PACKAGE OUTLINE
BA481
handbook, full pagewidth
0.55
max
1.6
max
25.4 min
3.04
max
25.4 min
MSA212 - 1
Dimensions in mm.
The grey marking band indicates the cathode.
Fig.5 SOD68 (DO-34).
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
1996 Mar 19
5
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