Memory ICs
Reset IC with battery backup function
BA6129AF / BA6162 / BA6162F
The BA6129AF, BA6162, and BA6162F are reset ICs with a battery backup function, designed for equipment using
SRAMs and other similar components. These ICs are configured of a reset signal and CS signal output unit and a
power supply switching unit. If the BA6129AF detects that the power supply has dropped to 3.5V or lower, it outputs
the CS, CSB, and Reset signals to set the SRAM in backup mode. If the voltage drops to 3.3V or lower, the power
supply switches to the battery. With the BA6162 and BA6162F, in the same way, a power supply of 4.2V is detected,
and if the voltage drops to 3.3V or lower, the power supply switches to the battery. These ICs allow SRAMs to be
write protected and allow the system to be reset, in addition to switching between the power supply and the battery.
•
Applications SRAMs (cards, cassettes, facsimile machines, copiers, word processors, personal computers, etc.)
Equipment using
•
Features with battery backup function.
1) Equipped
2) Equipped with both CS signals (CS and CSB) and
Reset signals.
3) Low current dissipation when powered from battery.
4) Low voltage loss when powered from battery.
5) Smooth switching between power supply and bat-
tery.
•
Absolute maximum ratings (Ta = 25°C)
Parameter
Power supply voltage
Output current 1
Output current 2
Power dissipation
Operating temperature
Storage temperature
Symbol
V
CC
I
OUT1
I
OUT2
Pd
Topr
Tstg
Limits
7.0
– 80 (BA6129AF)
– 40 (BA6162 / BA6162F)
– 200
900
∗
1
(BA6162)
550
∗
2
(BA6129AF)
(BA6162F)
– 20 ~ + 75
– 40 ~ + 125
Unit
V
mA
µA
mW
°C
°C
I
OUT1
indicates the output current on the V
CC
side, and I
OUT2
the output current on the V
BAT
side.
∗
1 Reduced by 9.0mW for each increase in Ta of 1°C over 25°C.
∗
2 Reduced by 5.5mW for each increase in Ta of 1°C over 25°C.
1
Memory ICs
BA6129AF / BA6162 / BA6162F
•
Block diagram
V
CC
8
N.C.
7
Vo
6
CSB
5
V
REF
+
–
+
–
+
–
1
GND
2
Reset
3
CS
4
V
BAT
•
Pin descriptions
Pin No.
1
2
3
4
5
6
7
8
Pin name
GND
Reset
CS
V
BAT
CSB
V
O
N.C.
V
CC
Power supply voltage
Substrate GND
Reset output
CS output
Battery power supply
CSB output
Power supply output
—
Function
•
Input / output circuit
V
CC
2
V
CC
Pin 5
CSB output
V
CC
6
Pin 2
Reset
output
Pin 3
CS output
3
Pin 6
Power supply
5
GND
output
GND
GND
Pin 4
Battery
power supply
Pin 8
Power supply
(V
CC
)
Pin 6
Power supply
output
8
4
6
GND
2
Memory ICs
characteristics
•
Electrical (unless otherwise noted, Ta = 25°C, VR
BA6129AF
Parameter
No-load current dissipation
I / O voltage differential 1
Vo output voltage 1
Vo output voltage 2
Vo output voltage 3
Detection voltage
Detection hysteresis voltage
Reset output low level voltage
Reset leakage current
Reset operating limit voltage
CS output low level voltage
CS output high level voltage
CSB output low level voltage
CSB output high level voltage
Detection voltage temperature characteristic
Switching voltage
Switching hysteresis voltage
Switching voltage temperature characteristic
Backup current dissipation
I / O voltage differential 2
Vo output voltage 4
Vo output voltage 5
Vo output voltage 6
Reverse current
Not designed for radiation resistance.
BA6129AF / BA6162 / BA6162F
RES
= V
CC
= 5V, R
RES
= 10kΩ)
Typ.
—
0.03
4.97
4.90
4.86
3.50
100
—
—
0.8
—
—
—
Max.
2.0
0.05
—
—
—
3.65
—
0.4
0.1
1.2
0.1
—
0.1
—
+ 0.05
3.45
—
+ 0.05
0.5
0.30
—
—
—
0.1
Unit
mA
V
V
V
V
V
mV
V
µA
V
V
V
V
V
% /
°C
V
mV
% /
°C
µA
V
V
V
V
µA
Conditions
V
CC
= 5V, V
BAT
= 3V
V
CC
= 5V, V
BAT
= 3V, I
O
= – 1mA
V
CC
= 5V, V
BAT
= 3V, I
O
= – 1mA
V
CC
= 5V, V
BAT
= 3V, I
O
= – 15mA
V
CC
= 5V, V
BAT
= 3V, I
O
= – 30mA
V
CC
= H→L
V
CC
= L→H
V
CC
= 3V
V
CC
= 5V, VR
RES
= 7V
V
CC
= H→L, V
RES
0.4V
Symbol
I
CC
V
SAT1
V
O1
V
O2
V
O3
V
S
V
SH
V
RESL
I
RESH
V
OPL
V
CSL
V
CSH
V
CSBL
V
CSBH
V
S
V
B
V
BH
V
B
I
CCB
V
SAT2
V
O4
V
O5
V
O6
I
OR
Min.
—
—
4.95
4.70
4.50
3.35
—
—
—
—
—
4.9
—
V
CC
= 3V, V
BAT
= 3V, I
CS
= + 1µA
V
CC
= 5V, V
BAT
= 3V, I
CS
= – 1µA
V
CC
= 5V, V
BAT
= 3V, I
CSB
= + 1µA
V
CC
= 3V, V
BAT
= 3V, I
CSB
= – 1µA
—
V
CC
= H→L, V
BAT
= 3V, R
O
= 200kΩ
V
CC
= L→H, V
BAT
= 3V, R
O
= 200kΩ
—
V
CC
= GND, V
BAT
= 3V
V
CC
= GND, V
BAT
= 3V, I
O
= – 1µA
V
CC
= GND, V
BAT
= 3V, I
O
= – 1µA
V
CC
= GND, V
BAT
= 3V, I
O
= – 100µA
I
O
= – 80mA
V
CC
= 5V, V
BAT
= GND
Vo – 0.1 —
– 0.05
3.15
—
– 0.05
—
—
2.70
2.60
V
CC
– 0.5
—
—
3.30
100
—
—
0.20
2.80
2.67
—
—
(Note) I
O
, I
CS
, and I
CSB
are + when flowing toward the pin and – when flowing away from the pin.
3
Memory ICs
BA6129AF / BA6162 / BA6162F
BA6162 / F (unless otherwise noted, Ta = 25°C, VR
RES
= V
CC
= 5V, R
RES
= 10kΩ)
Parameter
No-load current dissipation
I / O voltage differential 1
Vo output voltage 1
Vo output voltage 2
Vo output voltage 3
Detection voltage
Detection hysteresis voltage
Reset output low level voltage
Reset leakage current
Reset operating limit voltage
CS output low level voltage
CS output high level voltage
CSB output low level voltage
CSB output high level voltage
Detection voltage temperature characteristic
Switching voltage
Switching hysteresis voltage
Switching voltage temperature characteristic
Backup current dissipation
I / O voltage differential 2
Vo output voltage 4
Vo output voltage 5
Vo output voltage 6
Reverse current
Not designed for radiation resistance.
Symbol
I
CC
V
SAT1
V
O1
V
O2
V
O3
V
S
V
SH
V
RESL
I
RESH
V
OPL
V
CSL
V
CSH
V
CSBL
V
CSBH
K
VS
V
B
V
BH
K
VB
I
CCB
V
SAT2
V
O4
V
O5
V
O6
I
OR
Min.
—
—
4.95
4.70
4.50
4.00
—
—
—
—
—
4.9
—
Vo – 0.1
– 0.05
3.15
—
– 0.05
—
—
2.70
2.60
V
CC
– 0.5
—
Typ.
—
0.03
4.97
4.90
4.86
4.20
100
—
—
0.8
—
—
—
—
—
3.30
100
—
—
0.20
2.80
2.67
—
—
Max.
2.0
0.05
—
—
—
4.40
—
0.4
0.1
1.2
0.1
—
0.1
—
+ 0.05
3.45
—
+ 0.05
0.5
0.03
—
—
—
0.1
Unit
mA
V
V
V
V
V
mV
V
µA
V
V
V
V
V
% /
°C
V
mV
% /
°C
µA
V
V
V
V
µA
Conditions
V
CC
= 5V, V
BAT
= 3V
V
CC
= 5V, V
BAT
= 3V, I
O
= – 1mA
V
CC
= 5V, V
BAT
= 3V, I
O
= – 1mA
V
CC
= 5V, V
BAT
= 3V, I
O
= – 15mA
V
CC
= 5V, V
BAT
= 3V, I
O
= – 30mA
V
CC
= H→L
V
CC
= L→H
V
CC
= 3.7V
V
CC
= 5V, VR
RES
= 7V
V
CC
= H→L, V
RES
0.4V
V
CC
= 3.7V, V
BAT
= 3V, I
CS
= + 1µA
V
CC
= 5V, V
BAT
= 3V, I
CS
= – 1µA
V
CC
= 5V, V
BAT
= 3V, I
CSB
= + 1µA
V
CC
= 3.7V, V
BAT
= 3V, I
CSB
= – 1µA
—
V
CC
= H→L, V
BAT
= 3V, R
O
= 200kΩ
V
CC
= L→H, V
BAT
= 3V, R
O
= 200kΩ
—
V
CC
= GND, V
BAT
= 3V
V
CC
= GND, V
BAT
= 3V, I
O
= – 1µA
V
CC
= GND, V
BAT
= 3V, I
O
= – 1µA
V
CC
= GND, V
BAT
= 3V, I
O
= – 100µA
I
O
= – 40mA
V
CC
= 5V, V
BAT
= GND
(Note) I
O
, I
CS
, and I
CSB
are + when flowing toward the pin and – when flowing away from the pin.
4
Memory ICs
BA6129AF / BA6162 / BA6162F
•
Measurement circuit
V
SAT
= V
CC
– V
O
I
O
R
O
200kΩ
V
O
V
(V
B
)
A I
CC
V
CC
(V
S
.V
B
.V
OPL
)
R
RES
10kΩ
1
2
3
4
A
I
RES
A
V
RES
V
CS
V
V
I
CS
V
BAT
I
CCB
.I
OR
BA6129AF
(BA6162
/ F)
VR
RES
8
7
6
5
I
CSB
V
CSB
V
GND
(V
OPL
) (V
S
)
Fig. 1
5
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