EEWORLDEEWORLDEEWORLD

Part Number

Search

SGA7489ZSR

Description
0 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size486KB,6 Pages
ManufacturerRF Micro Devices (Qorvo)
Download Datasheet Parametric Compare View All

SGA7489ZSR Overview

0 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

SGA7489ZSR Parametric

Parameter NameAttribute value
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum input power16 dBm
Maximum operating frequency3000 MHz
Minimum operating frequency0.0 MHz
Processing package descriptionSOT-89, 3 PIN
stateACTIVE
Maximum voltage standing wave ratio10
structureCOMPONENT
Impedance characteristics50 ohm
Microwave RF TypeWIDE BAND LOW POWER
SGA7489ZDC
to 3000MHz
Silicon Germa-
nium HBT Cas-
cadable Gain
Block
SGA7489Z
DC to 3000MHz SILICON GERMANIUM HBT
CASCADABLE GAIN BLOCK
Package: SOT-89
Product Description
The SGA7489Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high F
T
and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
30
25
20
Gain (dB)
15
10
5
Isolation
Output
Return Loss
Features
DC to 3000MHz Operation
Very High IF Output IP
3
:
39dBm at 100MHz
High Output IP
3
: +35.5dBm
typ. at 850MHz
Low Noise Figure: 3.3dB typ.
at 1950MHz
Oscillator Amplifiers
PA for Low/Medium Power
Applications
IF/RF Buffer Amplifier
Drivers for CATV Amplifiers
LO Driver Amplifier
Gain, Return Loss, and Isolation vs. Frequency
V
D
=5.0V, I
D
=115mA (Typ), T
LEAD
=+25C
0
Applications
Return Loss & Isolation (dB)
-5
Gain
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Input Return
Loss
-10
-15
-20
-25
0
0
500
1000
1500
2000
2500
-30
3000
Frequency (MHz)
Parameter
Small Signal Gain
Output Power at 1dB Compression
Min.
20.0
17.0
18.5
Specification
Typ.
21.5
18.5
22.4
20.0
39.0
35.5
33.0
36.0*
3000
15.0
11.0
3.3
Max.
23.0
20.0
Unit
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
MHz
dB
dB
dB
Condition
850MHz
1950MHz
850MHz
1950MHz
100MHz
850MHz
1950MHz
1950MHz, Using 2GHz App. Ckt.
>9dB
1950MHz
1950MHz
1950MHz, Z
S
=50Ω
Output Third Intercept Point
31.0
Bandwidth Determined by Return
Loss
Input Return Loss
Output Return Loss
Noise Figure
10.3
9.0
4.3
Reverse Isolation
23.0
dB
1950MHz
Device Operating Voltage
4.7
5.0
5.3
V
Device Operating Current
103
115
127
mA
Thermal Resistance
82
°C/W
(Junction - Lead)
Test Conditions: V
S
=8V, I
D
=115mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, R
BIAS
=26Ω, T
L
=25°C, Z
S
=Z
L
=50Ω
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS100915
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6

SGA7489ZSR Related Products

SGA7489ZSR SGA7489ZPCK1 SGA7489Z
Description 0 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 0 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 0 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Maximum operating temperature 85 Cel 85 Cel 85 Cel
Minimum operating temperature -40 Cel -40 Cel -40 Cel
Maximum input power 16 dBm 16 dBm 16 dBm
Maximum operating frequency 3000 MHz 3000 MHz 3000 MHz
Minimum operating frequency 0.0 MHz 0.0 MHz 0.0 MHz
Processing package description SOT-89, 3 PIN SOT-89, 3 PIN SOT-89, 3 PIN
state ACTIVE ACTIVE ACTIVE
Maximum voltage standing wave ratio 10 10 10
structure COMPONENT COMPONENT COMPONENT
Impedance characteristics 50 ohm 50 ohm 50 ohm
Microwave RF Type WIDE BAND LOW POWER WIDE BAND LOW POWER WIDE BAND LOW POWER

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 899  1945  1868  2747  1730  19  40  38  56  35 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号