BL
FEATURES
GALAXY ELECTRICAL
EDB101 --- EDB106
VOLTAGE RANGE: 50 --- 400 V
CURRENT: 1.0 A
SILICON BRIDGE RECTIFIERS
DB-1
Rating to
400V
PRV
Surge overload rating to
30
Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Lead solderable per MIL-STD-202 method 208
Lead: silver plated copper, solderde plated
Plastic material has UL flammability classification
94V-O
Polarity symbols molded on body
Weight: 1.0 grams
.060(1.5)
.020(.51)
.016(.41)
.205(5.2)
.195(5.0)
.365(9.3)
.355(9.0)
.255(6.5)
.245(6.2)
.310(7.9)
.290(7.4)
.350(8.9)
.300(7.6)
.135(3.4)
.155(2.9)
.165(4.2)
.155(3.9)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EDB
101
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current
@T
A
=55
EDB
102
100
70
100
EDB
103
150
105
150
1.0
EDB
104
200
140
200
EDB
105
300
210
300
EDB
106
400
280
400
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 1.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
(NOTE 2)
I
FSM
30.0
A
V
F
I
R
t
rr
C
J
T
J
T
STG
15
1.0
10.0
1.0
50
10
- 55 ---- + 150
-
55
---- + 150
V
μA
mA
nS
pF
Maximum reverse recovery time (NOTE 1)
Typical junction calacitance
Operating junction temperature range
Storage temperature range
NOTE: 1. Test conditions: I
F
=0.5A, I
R
=-1.0A, I
RR
=-0.25A.
2. Measured at 1 MHz and applied rev erse v oltage of 4.0 v olts.
www.galaxycn.com
Document Number 0287009
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
AVERAGE FORWARD CURRENT,
AMPERSE
EDB101 --- EDB106
FIG.2 -- TYPICAL FORWARD CURRENT
DERATING CURVE
2
Single phaes
half wave 60Hz
resistive or
inductive load
50
N 1.
10
N 1.
+0.5A
t
rr
D.U.T.
(+)
25VDC
(approx)
(-)
PULSE
GENERATOR
(NOTE2)
0
-0.25A
1
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE1)
-1.0A
1cm
0
0
25
50
75
100
125
150
NOTES:1.RISE TIME =7ns MAX. INPUT IMPEDANCE=1MΩ.22pF
2.RISE TIME=10ns MAX. SOURCE IMPEDANCE=5OΩ
SET TIME BASE FOR
10 ns /cm
AMBIENT TEMPERATURE (
)
FIG.3 -- TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT,
100
INSTANTANEOUS FORWARD CURRENT,
AMPERSE
FIG.4 -- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
T
J
=150
10
1 .0
AMPERSE
T
J
=100
1.0
0 .1
0.1
T
J
=25
.0 1
T
J
=125
P u lse W id th
=300
u
S
.01
.0 0 1
0
20
40
60
80
100 120 140
0
0 .2
0 .4
0 .6
0 .8
1 .0
1 .2 1 .4
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG.5 -- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.6 -- TYPICAL JUNCTION CAPACITANCE
PEAK FORWARD SURGE CURRENT,
60
200
JUNCTION CAPACITANCE, (pF)
T
J
=25
100
60
40
20
10
6
4
2
1
.1
1
4
10
100
50
40
8.3ms Single Half Sine Wave
T
J
=25
EDB101-EDB104
AMPERSE
30
20
EDB105-EDB106
10
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE, VOLTS
www.galaxycn.com
Document Number 0287009
BL
GALAXY ELECTRICAL
2.
MCU
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