ZXTC2061E6
12V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26
Features
NPN + PNP Combination
BV
CEO
> 12 (-12)V
BV
EBO
> 7 (-7)V
Continuous Collector Current I
C
= 5 (-3.5)A
V
CE(sat)
< 32 (-70)mV @ 1A
R
CE(sat)
= 25 (45)mΩ
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.015 grams (Approximate)
ADVANCE INFORMATION
Description
Advanced process capability has been used to achieve this high
performance device. Combining NPN and PNP transistors in the
SOT26 package provides a compact solution for the intended
applications.
Applications
MOSFET and IGBT Gate Driving
Motor Drive
SOT26
C1
C2
C1
B1
Q1
Top View
E1
B2
E2
Top View
Pin-Out
B2
Q2
B1
C2
E1
E2
Device Symbol
Ordering Information
(Note 4)
Product
ZXTC2061E6TA
Notes:
Complianace
AEC-Q101
Marking
2061
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
2061 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
2061
Date Code Key
Year
2015
Code
C
Month
Code
Jan
1
2016
D
Feb
2
2017
E
Mar
3
2018
F
Apr
4
YM
2019
G
May
5
2020
H
Jun
6
2021
I
Jul
7
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
ZXTC2061E6
Document Number: DS33646 Rev: 3 - 2
1 of 8
www.diodes.com
November 2015
© Diodes Incorporated
ZXTC2061E6
Absolute Maximum Ratings – Q1 (NPN Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulsed Collector Current
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
20
12
7
5
12
1
Unit
V
V
V
A
A
A
ADVANCE INFORMATION
Absolute Maximum Ratings – Q2 (PNP Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulsed Collector Current
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
-12
-12
-7
-3.5
-10
-1
Unit
V
V
V
A
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
(Notes 5 & 9)
(Notes 6 & 9)
Power Dissipation
Linear Derating Factor
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 8 & 9)
(Notes 5 & 9)
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 8 & 9)
(Note 11)
P
D
Symbol
Value
0.7
5.6
0.9
7.2
1.1
8.8
1.1
8.8
1.7
13.6
179
139
113
113
73
87.58
-55 to +150
Unit
W
mW/°C
Thermal Resistance, Junction to Ambient
R
θJA
°C/W
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
R
θJL
T
J
, T
STG
°C
ESD Ratings
(Note 12)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
6. Same as Note 5, except the device is surface mounted on 25mm x 25mm 1oz copper.
7. Same as Note 5, except the device is surface mounted on 50mm x 50mm 2oz copper.
8. Same as Note 7, except the device is measured at t < 5 seconds.
9. For device with one active die, both collectors attached to a common heatsink.
10. For device with two active dice running at equal power, split heatsink 50% to each collector.
11. Thermal resistance from junction to solder-point (at the end of the collector lead).
12. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTC2061E6
Document Number: DS33646 Rev: 3 - 2
2 of 8
www.diodes.com
November 2015
© Diodes Incorporated
ZXTC2061E6
Thermal Characteristics and Derating Information
ADVANCE INFORMATION
I
C
Collector Current (A)
10
Limit
-I
C
Collector Current (A)
R
DS(on)
10
Limit
R
DS(on)
1
DC
1
1s
100ms
DC
1s
100ms
PNP
Tamb=25°C
50mm x 50mm 2oz FR4
One active die
100m
NPN
Tamb=25°C
50mm x 50mm 2oz FR4
One active die
10ms
1ms
100µs
100m
10ms
1ms
100µs
10m
10m
100m
V
CE
Collector-Emitter Voltage (V)
1
10
0.1
1
10
-V
CE
Collector-Emitter Voltage (V)
Safe Operating Area
110
100
90
80
70
D=0.5
60
50
40
D=0.2
30
20
10
0
100µ 1m
2.0
Safe Operating Area
Thermal Resistance (°C/W)
Max Power Dissipation (W)
50mm x 50mm 2oz FR4
One activ die, t < 5 sec
1.5
25mm x 25mm 1oz FR4
two activ die
50mm x 50mm 2oz FR4
Tamb=25°C
50mm x 50mm 2oz FR4
One activ die
1.0
One activ die
25mm x 25mm 1oz FR4
One activ die
D=0.1
D=0.05
Single Pulse
0.5
15mm x 15mm 1oz FR4
One activ die
10m 100m
1
10
100
1k
0.0
0
20
40
60
80
100 120 140 160
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
Derating Curve
Max Power Dissipation (W)
100
Single Pulse
Tamb=25°C
50mm x 50mm
2oz FR4
One active die
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
ZXTC2061E6
Document Number: DS33646 Rev: 3 - 2
3 of 8
www.diodes.com
November 2015
© Diodes Incorporated
ZXTC2061E6
Electrical Characteristics – Q1 (NPN Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 13)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
ON CHARACTERISTICS
(Note 13)
DC Current Gain
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min
20
12
7
—
—
500
480
260
—
—
—
—
—
—
—
—
—
Typ
40
17
8.4
<1
<1
800
750
390
32
50
65
145
920
810
26
260
71
70
233
72
Max
—
—
—
50
0.5
50
1,500
—
40
60
80
180
1,000
900
35
—
—
—
—
—
Unit
V
V
V
nA
µA
nA
Test Condition
I
C
= 100µA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CB
= 20V
V
CB
= 20V, T
A
= +100°C
V
EB
= 5.6V
I
C
= 10mA, V
CE
= 2V
I
C
= 1.0A, V
CE
= 2V
I
C
= 5A, V
CE
= 2V
I
C
= 1.0A, I
B
= 100mA
I
C
= 1.0A, I
B
= 10mA
I
C
= 2.0A, I
B
= 40mA
I
C
= 5A, I
B
= 100mA
I
C
= 5A, I
B
= 100mA
I
C
= 5A, V
CE
= 2V
V
CB
= 10V, f = 1.0MHz
V
CE
= 10V, I
C
= 50mA, f = 100MHz
V
CC
= 10V, I
C
= 1A, I
B1
= -I
B2
= 10mA
ADVANCE INFORMATION
h
FE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Delay Time
Rise Time
Storage Time
Fall Time
V
CE(sat)
V
BE(sat)
V
BE(on)
C
obo
f
T
t
d
t
r
t
s
t
f
mV
mV
mV
pF
MHz
ns
ns
ns
ns
Electrical Characteristics – Q2 (PNP Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 13)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
ON CHARACTERISTICS
(Note 13)
DC Current Gain
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min
-12
-12
-7
—
—
—
500
290
75
—
—
—
—
—
—
—
—
—
—
—
—
Typ
-35
-25
-8.4
< -1
< -1
800
450
100
-55
-170
-220
-150
-955
-830
17
310
41
62
179
65
Max
—
—
—
-50
-0.5
-50
1500
—
—
-70
-265
-360
-200
-1,050
-900
25
—
—
—
—
—
Unit
V
V
V
nA
µA
nA
Test Condition
I
C
= -100µA, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -100µA, I
C
= 0
V
CB
= -12V
V
CB
= -12V, T
A
= +100°C
V
EB
= -5.6V
I
C
= -10mA, V
CE
= -2V
I
C
= -1.0A, V
CE
= -2V
I
C
= -3.5A, V
CE
= -2V
I
C
= -1.0A, I
B
= -100mA
I
C
= -1.0A, I
B
= -10mA
I
C
= -2.0A, I
B
= -40mA
I
C
= -3.5A, I
B
= -350mA
I
C
= -3.5A, I
B
= -350mA
I
C
= -3.5A, V
CE
= -2V
V
CB
= -10V, f = 1.0MHz
V
CE
= -10V, I
C
= -50mA, f = 100MHz
V
CC
= -10V, I
C
= -1A,
I
B1
= -I
B2
= -10mA
h
FE
—
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Delay Time
Rise Time
Storage Time
Fall Time
Note:
V
CE(sat)
V
BE(sat)
V
BE(on)
C
obo
f
T
t
d
t
r
t
s
t
f
mV
mV
mV
pF
MHz
ns
ns
ns
ns
13. Measured under pulsed conditions. Pulse width
300μs. Duty cycle
2%.
ZXTC2061E6
Document Number: DS33646 Rev: 3 - 2
4 of 8
www.diodes.com
November 2015
© Diodes Incorporated
ZXTC2061E6
Typical Electrical Characteristics – Q1 (NPN Transistor)
(@T
A
= +25°C, unless otherwise specified.)
ADVANCE INFORMATION
1
Tamb=25°C
I
C
/I
B
=100
I
C
/I
B
=50
0.4
I
C
/I
B
=10
0.3
V
CE(SAT)
(V)
V
CE(SAT)
(V)
100m
0.2
150°C
100°C
10m
I
C
/I
B
=10
0.1
25°C
-55°C
1m
1m
10m
100m
1
10
0.0
1m
10m
100m
1
10
I
C
Collector Current (A)
I
C
Collector Current (A)
V
CE(SAT)
v I
C
1.2
1.8
150°C
1.6
1.4
100°C
1.2
1.0
25°C
0.8
0.6
0.4
-55°C
0.2
0.0
1m
10m
V
CE
=2V
V
CE(SAT)
v I
C
1600
I
C
/I
B
=10
Typical Gain (h
FE
)
1400
1200
1000
800
600
400
200
100m
1
10
0
Normalised Gain
1.0
25°C
-55°C
V
BE(SAT)
(V)
0.8
0.6
100°C
150°C
0.4
1m
10m
100m
1
10
I
C
Collector Current (A)
I
C
Collector Current (A)
h
FE
v I
C
1.0
V
CE
=2V
-55°C
25°C
V
BE(SAT)
v I
C
0.8
V
BE(ON)
(V)
0.6
150°C
0.4
100°C
0.2
1m
10m
100m
1
10
I
C
Collector Current (A)
V
BE(ON)
v I
C
ZXTC2061E6
Document Number: DS33646 Rev: 3 - 2
5 of 8
www.diodes.com
November 2015
© Diodes Incorporated
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