DMP2200UFCL
Dual P-CHANNEL ENHANCEMENT MODE MOSFET
Summary
V
(BR)DSS
R
DS(on)
max
200mΩ @V
GS
= -4.5V
-20V
290mΩ @V
GS
= -2.5V
390mΩ @V
GS
= -1.8V
650mΩ @V
GS
= -1.5V
I
D
max
-1.7 A
-1.3 A
-1.1 A
-0.5 A
Features
•
•
•
•
•
•
•
Typical off board profile of 0.5mm - ideally suited for thin
applications
Low R
DS(ON)
– minimizes conduction losses
PCB footprint of 2.56mm
2
ADVANCE INFORMATION
NEW PRODUCT
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
ESD Protected Gate
Description
This device provides a high performance, low R
DS(ON)
P-Channel
MOSFET in the thermally and spatially efficient DFN1616-6 package.
The low R
DS(ON)
of this MOSFET ensures conduction losses are kept
making it ideal for use in the following applications:
Mechanical Data
•
•
•
•
•
•
Case: U-DFN1616-6 Type F
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Lead Free Plating (NiPdAu Finish over Copper leadframe).
Terminals: Solderable per MIL-STD-202, Method 208
e4
Weight: 0.04 grams (approximate)
Applications
•
•
Battery disconnect switch
Load switch for power management functions
Pin1
ESD PROTECTED
Bottom View
Device Symbol
Pin Configuration
Bottom View
Ordering Information
(Note 4)
Product
DMP2200UFCL-7
Notes:
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
P20
YM
Date Code Key
Year
Code
Month
Code
P20 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B= 2014)
M = Month (ex: 9 = September)
2014
B
Jan
1
Feb
2
2015
C
Mar
3
Apr
4
2016
D
May
5
Jun
6
2017
E
Jul
7
2018
F
Aug
8
Sep
9
2019
G
Oct
O
Nov
N
2020
H
Dec
D
June 2014
© Diodes Incorporated
DMP2200UFCL
Document number: DS36619 Rev. 2 - 2
1 of 6
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DMP2200UFCL
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6)
@T
A
= +25°C
@T
A
= +85°C
Symbol
V
DSS
V
GSS
I
D
Value
-20
±8
-1.7
-1.2
Units
V
V
A
ADVANCE INFORMATION
NEW PRODUCT
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Symbol
P
D
R
θ
JA
T
J,
T
STG
Value
0.66
1.58
193
80
-55 to +150
Units
W
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.4
⎯
153
220
260
360
⎯
184
25.8
18.6
2.2
0.4
0.5
9.8
23
87
41
-1.2
200
290
390
650
-1.2
—
—
—
—
—
—
—
—
—
—
V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -2.0A
V
GS
= -2.5V, I
D
= -1.2A
V
GS
= -1.8V, I
D
= -0.24A
V
GS
= -1.5V, I
D
= -0.18A
V
GS
= 0V, I
S
= -0.6A
Symbol
BV
DSS
I
DSS
I
GSS
Min
-20
⎯
⎯
Typ
⎯
⎯
⎯
Max
⎯
-1
±10
Unit
V
µA
µA
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= -20V, V
GS
= 0V
V
GS
=
±8V,
V
DS
= 0V
Static Drain-Source On-Resistance
R
DS (ON)
⎯
⎯
—
—
—
—
—
—
—
—
—
—
mΩ
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING CHARACTERISTICS (Note 8)
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
Notes:
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(ON)
t
D(OFF)
t
r
t
f
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -1.7A
V
DD
= -10V, I
D
= -1.5A,
V
GS
= -4.5V, R
GEN
= 1Ω
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP2200UFCL
Document number: DS36619 Rev. 2 - 2
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June 2014
© Diodes Incorporated
DMP2200UFCL
10
V
GS
= -8.0V
V
GS
= -4.0V
V
GS
= -3.0V
10
V
DS
= -5.0V
T
A
= -55
°
C
T
A
= 25
°
C
8
-I
D
, DRAIN CURRENT (A)
V
GS
= -4.5V
8
-I
D
, DRAIN CURRENT (A)
T
A
= 85
°
C
T
A
= 150
°
C
6
V
GS
= -2.5V
6
T
A
= 125
°
C
ADVANCE INFORMATION
NEW PRODUCT
4
V
GS
= -2.0V
4
2
V
GS
= -1.5V
V
GS
= -1.2V
2
0
0
0.5
1
1.5
2
2.5
-V
DS
, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
3
0
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.5
V
GS
= -1.8V
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
I
D
= -0.24A
I
D
= -1.2A
I
D
= -2.0A
0.4
0.3
V
GS
= -2.5V
V
GS
= -4.5V
0.2
0.1
0
0
2
4
6
8
-I
D
, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
10
0
1
2
3
4
5
6
7
-V
GS
, GATE-SOURCE CURRENT (V)
Figure 4 Typical Transfer Characteristics
8
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.5
V
GS
= -4.5V
2
1.8
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
V
GS
= -2.5V
I
D
= -1A
V
GS
= -4.5V
I
D
= -3A
0.4
T
A
= 150
°
C
0.3
T
A
= 85
°
C
T
A
= 125
°
C
T
A
= 25
°
C
0.2
T
A
= -55
°
C
0.1
0
0
2
4
6
8
-I
D
, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
10
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with Temperature
DMP2200UFCL
Document number: DS36619 Rev. 2 - 2
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June 2014
© Diodes Incorporated
DMP2200UFCL
0.5
R
DS(on)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1
0.4
0.8
-I
D
= 1mA
0.3
V
GS
= -2.5V
I
D
= -1A
0.6
-I
D
= 250µA
ADVANCE INFORMATION
NEW PRODUCT
0.2
V
GS
= -4.5V
I
D
= -3A
0.4
0.1
0.2
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
0
-50
10
1000
f = 1MHz
8
-I
S
, SOURCE CURRENT (A)
T
A
= 150
°
C
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
100
6
T
A
= 125
°
C
C
oss
C
rss
4
T
A
= 85
°
C
T
A
= 25
°
C
10
2
T
A
= -55
°
C
0
0
0.3
0.6
0.9
1.2
1.5
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1
0
2
6
8 10 12 14 16 18
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
4
20
8
10
R
DS(on)
Limited
-V
GS
, GATE-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
6
1
DC
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
T
J(max)
= 150°C
T
A
= 25°C
V
GS
= -4.5V
Single Pulse
DUT on 1 * MRP Board
P
W
= 100µs
4
V
DS
= -10V
I
D
= -1.7A
0.1
2
0
0
0.5
1
1.5
2
2.5
3
3.5
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
4
0.01
0.1
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMP2200UFCL
Document number: DS36619 Rev. 2 - 2
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June 2014
© Diodes Incorporated
DMP2200UFCL
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
r(t), TRANSIENT THERMAL RESISTANCE
0.1
D = 0.1
D = 0.05
ADVANCE INFORMATION
NEW PRODUCT
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 190°C/W
Duty Cycle, D = t1/ t2
0.0001
0.001
0.01
0.1
1
10
100
1000
0.001
0.000001 0.00001
t1, PULSE DURATION TIMES (sec)
Figure 13 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A 1
A 3
A
S e a ti n g P l a n e
D
D 1
D 2
2 X
P in # 1 I D
E
K
R
0
.
1
0
0
E 2
2 x
e
Z
4 x
b
L
U-DFN1616-6
Type F
Dim Min Max Typ
A
0.45 0.55 0.50
A1
0
0.05 0.02
A3
—
—
0.127
b
0.20 0.30 0.25
D
1.55 1.65 1.60
D1
1.14 1.34 1.24
D2
0.38 0.58 0.48
E
1.55 1.65 1.60
E2
0.54 0.74 0.64
e
—
—
0.50
K
—
—
0.23
L
0.15 0.35 0.25
Z
—
—
0.175
All Dimensions in mm
︵
︵
X 2
G 1
︵
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
Value
(in mm)
0.500
0.150
0.180
0.320
0.580
1.320
0.450
0.700
1.900
︶
︶
︶
Dimensions
C
G
G1
X
X1
X2
Y
Y1
Y
X 1
Y 1
G
Y 2
Y
C
DMP2200UFCL
Document number: DS36619 Rev. 2 - 2
X
5 of 6
www.diodes.com
June 2014
© Diodes Incorporated
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