DMP2540UCB9
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
(Typ. @ V
GS
= -4.5V, T
A
V
DSS
-25V
R
DS(on)
33mΩ
Q
g
4.8nC
Q
gd
1.0nC
= +25°C)
I
D
-5.2A
Features and Benefits
LD-MOS Technology with the Lowest Figure of Merit:
R
DS(on)
= 33mΩ to Minimize On-State Losses
Q
g
= 4.8nC for Ultra-Fast Switching
V
gs(th)
= -0.6V typ. for a Low Turn-On Potential
CSP with Footprint 1.5mm × 1.5mm
Height = 0.62mm for Low Profile
ESD = 6kV HBM Protection of Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
ADVANCE INFORMATION
Description and Applications
This new generation MOSFET is designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Battery Management
Load Switch
Battery Protection
Mechanical Data
Case: U-WLB1515-9
Terminal Connections: See Diagram Below
Weight: 0.0018 grams (Approximate)
Drain
G
D
D
ESD PROTECTED TO 6kV
D
D
S
S
S
Gate
S
Gate
Protection
Diode
Source
Top-View
Pin Configuration
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP2540UCB9-7
Notes:
Case
U-WLB1515-9
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-WLB1515-9
3W = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
3W
YM
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
2012
Z
Mar
3
Apr
4
2013
A
May
5
Jun
6
2014
B
Jul
7
2015
C
Aug
8
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
May 2015
© Diodes Incorporated
DMP2540UCB9
Document number: DS35611 Rev. 5 - 2
1 of 6
www.diodes.com
DMP2540UCB9
Maximum Ratings
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
I
S
I
SM
I
G
I
GM
Value
-25
-6
-4.0
-3.0
-5.2
-4.0
-30
-2.0
-15
-0.6
-8
Units
V
V
A
A
A
A
A
A
A
NEW PRODUCT
ADVANCE INFORMATION
Steady
State
Pulsed Drain Current (Pulse duration 10μs, duty cycle ≤1%)
Continuous Source Pin Current (Note 6)
Pulsed Source Pin Current (Pulse duration 10μs, duty cycle ≤1%)
Continuous Gate Clamp Current (Note 5)
Pulsed Gate Clamp Current (Pulse duration 10μs, duty cycle ≤1%)
Continuous Drain Current (Note 6) V
GS
= -4.5V
Thermal Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
P
D
P
D
R
JA
R
JA
T
J,
T
STG
Value
1.0
1.8
126.8
69
-55 to +150
Units
W
W
°C/W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
Q
rr
t
rr
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-25
-
-
-0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-0.6
33
42
52
12
-0.7
100
130
342
174
70
28
4.8
0.5
1.0
11
12
56
42
Max
-
-1
-100
-1.1
40
50
60
-
-1
-
-
450
225
90
35
6.0
-
-
-
-
-
-
Unit
V
μA
nA
V
mΩ
S
V
nC
ns
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -20V, V
GS
= 0V
V
GS
= -6V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -4.5V, I
D
= - 2A
V
GS
= -2.5V, I
D
= -2A
V
GS
= -1.8V, I
D
= -2A
V
DS
= -10V, I
D
= -2A
V
GS
= 0V, I
S
= -2A
V
dd
= –9.5V, I
F
= –2A, di/dt =
200A/μs
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @T
C
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
Reverse Recovery Charge
Reverse Recovery Time
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -2A
V
DD
= -10V, V
GS
= -4.5V,
I
DS
= -2A, R
G
= 2Ω,
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch
2
(6.45-cm
2
), 2-oz. (0.071-mm thick) Cu
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP2540UCB9
Document number: DS35611 Rev. 5 - 2
2 of 6
www.diodes.com
May 2015
© Diodes Incorporated
DMP2540UCB9
10
10
V
DS
= -5.0V
V
GS
= 8.0V
V
GS
= 4.5V
8
-I
D
, DRAIN CURRENT (A)
V
GS
= 2.5V
V
GS
= 2.0V
V
GS
= 1.5V
8
-I
D
, DRAIN CURRENT (A)
NEW PRODUCT
ADVANCE INFORMATION
6
V
GS
= 1.8V
6
4
4
2
V
GS
= 1.2V
2
T
A
= 150
C
T
A
= 125
C
T
A
= 85
C
T
A
= 25
C
T
A
= -55
C
0
0
0.4
0.8
1.2
1.6
-V
DS
, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
2.0
0
0
0.5
1.0
1.5
-V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
2.0
R
DS(ON)
,DRAIN-SOURCE ON-RESISTANCE(
)
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
1
2
3
4
5
6
7
8
-I
D
, DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
9
10
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE(
)
0.10
0.06
V
GS
= -4.5V
T
A
= 150
C
T
A
= 125
C
T
A
= 85
C
0.05
0.04
T
A
= 25
C
0.03
T
A
= -55
C
0.02
0
2
4
6
8
-I
D
, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
10
R
DS(on)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.7
1.5
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (Normalized)
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 6 On-Resistance Variation with Temperature
V
GS
= -4.5V
I
D
= -4A
V
GS
= -2.5V
I
D
= -2A
1.3
1.1
0.9
0.7
0.5
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 5 On-Resistance Variation with Temperature
DMP2540UCB9
Document number: DS35611 Rev. 5 - 2
3 of 6
www.diodes.com
May 2015
© Diodes Incorporated
DMP2540UCB9
1.4
V
GS(TH)
, GATE THRESHOLD VOLTAGE(V)
10
1.2
8
1.0
0.8
0.6
0.4
0.2
0
-50
-I
S
, SOURCE CURRENT (A)
NEW PRODUCT
ADVANCE INFORMATION
6
4
2
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0.4
0.6
0.8
1.0
1.2
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1,000
f = 1MHz
1,000
C
T
, JUNCTION CAPACITANCE (pF)
I
GSS
, LEAKAGE CURRENT (nA)
C
iss
T
A
= 150°C
100
T
A
= 125°C
C
oss
100
C
rss
10
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
10
0
5
10
15
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
20
1
1
2
3
4
5
6
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 10 Gate-Source Leakage Current vs. Voltage
6
-V
GS
, GATE-SOURCE VOLTAGE (V)
100
R
DS(on)
Limited
P
W
= 10µs
5
4
-I
D
, DRAIN CURRENT (A)
10
3
1
DC
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
P
W
= 100µs
2
0.1
T
J(max)
= 150°C
1
0
0
1
2
3
4
5
6
7
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
8
0.01
0.1
T
A
= 25°C
V
GS
= -8V
Single Pulse
DUT on 1 * MRP Board
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
DMP2540UCB9
Document number: DS35611 Rev. 5 - 2
4 of 6
www.diodes.com
May 2015
© Diodes Incorporated
DMP2540UCB9
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
NEW PRODUCT
ADVANCE INFORMATION
D = 0.02
0.01
D = 0.01
D = 0.005
R
JA
(t) = r(t) * R
JA
R
JA
= 70°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
10
100
1,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
PIN ID
6X-Ø b
e
E
e
e
e
Dim
A
A2
A3
b
D
E
e
U-WLB1515-9
Min
Max
Typ
-
0.62
-
-
0.36
0.36
0.020
0.030
0.025
0.27
0.37
0.32
1.47
1.51
1.49
1.47
1.51
1.49
-
-
0.50
All Dimensions in mm
A3
SEATING PLANE
A2
A
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
D
Dimensions
C1
C
C
C1
C2
D
Value
(in mm)
0.50
1.00
1.00
0.25
C
C2
DMP2540UCB9
Document number: DS35611 Rev. 5 - 2
5 of 6
www.diodes.com
May 2015
© Diodes Incorporated
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