RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipo-
lar Transistor (SiGe HBT) designed for operation from 50MHzto3.5GHz. The
SGA8543Z is optimized for 3.3V operation but can be biased at 2.7V for low-volt-
age battery operated systems. The device provides low NF and excellent linearity at
a low cost. It can be operated over a wide range of currents depending on the
power and linearity requirements.The matte tin finish on the lead-free “Z” package
is applied using a post annealing process to mitigate tin whisker formation and is
RoHS compliant per EU Directive 2002/95. The package body is manufactured
with green molding
compounds that contain no antimony triox-
Optimum Technology
ide or halogenated fire retardants.
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
G
MAX
(dB)
31.0
28.0
OIP
3
25.0
22.0
19.0
P
1 dB
16.0
13.0
10.0
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
23
20
17
G
M AX
32
29
26
Features
.05GHzto3.5GHz Operation
Lead Free, RoHS Compliant, and
Green Package
1.5dB NF
MN
at 2.44GHz
15.6dB G
MAX
at 2.44GHz
P
1dB
=+20.6dBm at 2.44GHz
OIP
3
=+34.6dBm at 2.44GHz
Low Cost, High Performance,
Versatility
Typical G
MAX
, OIP
3
, P
1dB
@ 3.3V, 86mA
38
35
Applications
OIP
3
, P
1dB
(dBm)
Si BiCMOS
Analog and Digital Wireless
Systems
3G, Cellular, PCS, RFID
Fixed Wireless, Pager Systems
PA Stage for Medium Power
Applications
AN-079 Contains Detailed
Application Circuits
Condition
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Frequency (GHz)
Parameter
Power Gain
Output Power at 1dB Compression
Output Third Order Intercept Point
Noise Figure
Minimum Noise Figure
Maximum Available Gain
[2]
Min.
Specification
Typ.
19.0
14.0
20.0
20.6
33.4
34.6
3.1
2.4
1.0
1.5
22.9
15.0
18.0
Max.
Unit
dB
dB
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
dB
880MHz, Z
S
=Z
SOPT
, Z
L
=Z
LOPT
2440MHz
880MHz, Z
S
=Z
SOPT
, Z
L
=Z
LOPT
2440MHz
880MHz, Z
S
=Z
SOPT
, Z
L
=Z
LOPT
2440MHz
880MHz, Z
S
=Z
SOPT
, Z
L
=Z
LOPT
2440MHz
880MHz, I
CE
=25mA, Z
S
=Γ
OPT
, Z
L
=Z
L
, NF
MIN
2440MHz
880MHz, Z
S
=Z
S
, Z
L
=Z
L
2440MHz
880MHz
[2]
Insertion Gain
[1]
120
180
300
D
CC
Current Gain
Breakdown Voltage
5.7
6.0
V
Collector - Emitter
Device Operating Voltage
3.8
V
Collector - Emitter
Device Operating Current
95
mA
Collector - Emitter
Thermal Resistance
151
°C/W
junction to backside
Test Conditions: V
CE
=3.3V, I
CE
=86mA Typ. (unless noted otherwise), T
L
=25°C, OIP
3
Tone Spacing=1MHz, P
OUT
per tone=5dBm
[1] 100% production tested using 50Ω contact board (no matching circuitry) [2] Data with Application Circuit
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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