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BAT43

Description
0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-204AH
Categorysemiconductor    Discrete semiconductor   
File Size46KB,3 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
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0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-204AH

R
BAT42,BAT43
SMALL SIGNAL SCHOTTKY DIODES
DO-35
S E M I C O N D U C T O R
FEATURES
For general purpose applications
These diodes features very low turn-on voltage and fast switching.
These devices are protected by a PN junction guard ring against excessive
voltage, such as electrostatic discharges.
These diodes are also available in the MiniMELF case with type designation
LL42 to LL43.
High temperature soldering guaranteed
:
260°C
/
10 seconds at terminals
Component in accordance to RoHS 2011
/
65
/
EU
0.079(2.0)
MAX
DIA
1.083(27.5)
MIN
0.150(3.8)
MAX
MECHANICAL DATA
Case: DO-35 glass case
Polarity:color band denotes cathode end
Weight: Approx. 0.13 gram
0.020(0.52)
MAX
DIA
1.083(27.5)
MIN
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
Repetitive Peak Reverse Voltage
Forward Continuous Current at T
A
=25°C
Repetitive Peak Forward Current at t
p
1s,
d
0.5,
Surge forward current at t
p
10m
S
,
Power Dissipation at
Junction temperature
Ambient Operating
temperature Range
Storage Temperature
Range
Dimensions in inches and (millimeters)
Value
30
200
500
4
200
125
-55 to+125
-55 to+150
1)
1)
1)
1)
Units
V
mA
mA
A
mW
°C
°C
°C
T
A
=25°C
T
A
=25°C
T
A
=65°C
V
RRM
I
F
I
FRM
I
FSM
P
tot
T
J
T
A
T
STG
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
Symbols
Reverse breakdown voltage Tested with 100
m
A Pulses
Forward voltage Pulse Test t
p
300
m
s,
d
2%
at I
F
=200mA,
at I
F
=10mA,
BAT42
at I
F
=50mA,
BAT42
at I
F
=2mA ,
BAT43
at I
F
=15mA,
BAT43
Leakage current pulse test t
p
300
m
s ,
d
2% at V
R
=25V,
T
J
=25°C; at V
R
=25V, T
J
=100°C
Min.
30
1
0.4
0.65
0.33
0.45
0.5
100
7
5
300
1)
Typ.
Max.
Unis
V
V
V
V
V
V
mA
mA
pF
ns
%
°
C
/W
V
(BR)R
VF
VF
VF
VF
VF
0.26
Junction Capacitance at V
R
=25V ,f=1MHz
Reverse Recovery time Form I
F
=10mA,through
I
R
=1mA R
L
=100
W
Detection efficiency at R
L
=15k
W
C
L
=300pF,f=45MHz, V
R
=2V
80
Thermal resistance junction to ambient air
R
qJA
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature(DO-35)
I
R
I
R
C
J
trr
JINAN JINGHENG ELECTRONICS CO., LTD.
3
-
1
HTTP
://
WWW.JINGHENGGROUP.COM

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Description 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-204AH 0.2 A, SILICON, SIGNAL DIODE, DO-35

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