2N5415, S, UA
2N5416, S, UA
PNP Low Power, High Voltage Silicon Transistor
Rev. V2
Features
•
Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/485
•
TO-39, TO-5 and UA Package Types
•
Suitable For Drivers in High-Voltage, Low Current Inverters, Switching and
Series Regulators
Electrical Characteristics (T
A
= +25
o
C unless otherwise specified)
Parameter
Emitter
-
Base Cutoff Current
Test Conditions
V
EB
=
-6.0
V dc
V
CE
=
-150
V dc 2N5415, S, UA
V
CE
=
-250
V dc 2N5416, S, UA
V
CE
=
-200
V dc 2N5415, S, UA
V
CE
=
-300
V dc 2N5416, S, UA
V
BE
=
-1.5
V dc
V
CE
=
-200
V dc 2N5415, S, UA
V
CE
=
-300
V dc 2N5416, S, UA
V
CB
=
-175
V dc 2N5415, S, UA
V
CB
=
-280
V dc 2N5416, S, UA
Symbol Units
I
EBO
µA dc
Min.
—
Max.
-20
Collector
-
Emitter Cutoff
I
CEO1
µA dc
-50
Collector
-
Emitter Cutoff
I
CEO2
mA dc
-1
Collector
-
Emitter Cutoff Current
I
CEX
µA dc
—
-50
Collector
-
Base Cutoff Current
I
CBO1
µA dc
—
-50
Collector
-
Base Cutoff Current
V
CB
=
-200
V dc 2N5415, S, UA
V
CB
=
-350
V dc 2N5416, S, UA
V
CE
=
-10
V dc, I
C
=
-50
mA dc
I
C
=
-50
mA dc, I
B
=
-5
mA dc
I
CBO2
µA dc
—
-500
Base
-
Emitter Voltage Saturation
Collector
-
Emitter Voltage (saturated)
V
BE
V
CE(sat)
V dc
V dc
-1.5
-2.0
Forward Current Transfer Ratio
V
CE
=
-10
V dc, I
C
=
-50
mA dc
V
CE
=
-10
V dc, I
C
=
-1
mA dc
h
FE1
h
FE2
30
-
15
120
1
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Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5415, S, UA
2N5416, S, UA
PNP Low Power, High Voltage Silicon Transistor
Rev. V2
Electrical Characteristics (+25
o
C unless otherwise specified)
Parameter
Test Conditions
T
A
= +150
o
C
Collector
-
Base Cutoff Current
V
CB
=
-175
V dc 2N5415, S, UA
V
CB
=
-280
V dc 2N5416, S, UA
I
CBO3
mA dc
-1
Symbol Units
Min.
Max.
Forward – Current Transfer Ratio
T
A
=
-65
o
C
V
CE
=
-10
V dc, I
C
=
-50
mA dc
Test Conditions
h
FE3
15
Parameter
Dynamic Characteristics
Symbol Units
Min.
Max.
Small-Signal Short-Circuit Forward-Current
V
CE
=
-10
V dc, I
C
=
-10
mA dc, f = 5 MHz
Transfer Ratio
Output Capacitance Output Capacitance
V
CB
=
-10
V dc, I
E
= 0, 100 kHz ≤ f ≤ 1
MHz
| h
FE
|
C
obo
h
fe
C
ibo
pF
pF
3
—
25
—
15
15
—
75
Small-Signal Short-Circuit Forward-Current
V
CE
=
-10
V dc, I
C
=
-5
mA dc, f < 1 kHz
Transfer Ratio
Input Capacitance (Output Open Circuited) V
EB
=
-5
V dc, I
C
= 0, 100 kHz ≤ f ≤ 1 MHz
Switching Characteristics
Turn-On Time
Turn-Off Time
V
CC
=
-200
V dc, I
C
=
-50
mA dc,
I
B1
=
-5
mA dc
V
CC
=
-200
V dc, I
C
=
-50
mA dc,
I
B1
= I
B2
=
-5
mA dc
t
on
t
off
µs
µs
—
—
1.0
10
Absolute Maximum Ratings (T
A
= +25
o
C unless otherwise specified)
Ratings
Collector
-
Emitter Voltage
Collector
-
Base Voltage
Emitter
-
Base Voltage
Collector Current
Junction & Storage Temperature Range
2
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Visit
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for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
2N5415
-200
V dc
-200
V dc
-6.0
V dc
-1.0
A dc
-65°C
to +200°C
2N5416
-300
V dc
-350
V dc
2N5415, S, UA
2N5416, S, UA
PNP Low Power, High Voltage Silicon Transistor
Rev. V2
Absolute Maximum Ratings (T
A
= +25
o
C unless otherwise specified)
Thermal Characteristics
Symbol
Max. Value
Thermal Resistance, Junction to Ambient
2N5415, 2N5415S, 2N5415UA
2N5416, 2N5416S, 2N5416UA
Thermal Resistance, Junction to Case
2N5415, 2N5415S
2N5416, 2N5416S
Thermal Resistance, Junction to Solder Pad
2N5415UA, 2N5416UA
R
θJSP
80°C/W
R
θJC
17.5°C/W
17.5°C/W
R
θJA
234°C/W
234°C/W
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5415, S, UA
2N5416, S, UA
PNP Low Power, High Voltage Silicon Transistor
Rev. V2
Absolute Maximum Ratings ( T
A
= +25
o
C unless otherwise specified)
Characteristics
Symbol
Max. Value
T
A
= +25
o
C
2N5415, 2N5415S, 2N5415UA
2N5416, 2N5416S, 2N5416UA
P
T (1)
0.75 W
0.75 W
T
C
= +25
o
C
2N5415, 2N5415S
2N5416, 2N5416S
P
T (2)
10 W
10 W
T
SP
= +25
o
C
2N5415UA, 2N5416UA
P
T (3)
2.0 W
(1)
(2)
(3)
Derate linearly 4.29 mW/
o
C for T
A
> +25
o
C.
Derate linearly 57.2 mW/
o
C for T
C
> +25
o
C.
Derate linearly 12.5 mW/
o
C for T
SP
> +25
o
C
Electrical Measurements
Breakdown Voltage, Collector-Emitter
Test Conditions
I
C
=
-50
mA dc, I
B
=
-5
mA dc,
L = 25 mH; f = 30
-
60 Hz
2N5415, S, UA
2N5416, S, UA
Symbol Units
V
BR(CEO)
V dc
Min.
Max.
—
-200
-300
Safe Operating Area
DC Tests:
Test 1 (except UA):
Test 2: (except UA)
Test 3: (except UA)
Test 4:
Test 1: UA only
Test 2: UA only
Test 3:
Test 4:
T
C
= +25°C; I Cycle; t = 0.4 s
V
CE
=
-10
V dc; I
C
=
-1.0
A dc
V
CE
=
-100
V dc; I
C
=
-100
mA dc
V
CE
=
-200
V dc; I
C
=
-24
mA dc
V
CE
=
-300
V dc; I
C
=
-10
mA dc
V
CE
=
-10
V dc; I
C
=
-0.3
A dc
V
CE
=
-100
V dc; I
C
=
-30
mA dc
V
CE
=
-200
V dc; I
C
=
-12
mA dc (2N5415UA only)
V
CE
=
-300
V dc; I
C
=
-5
mA dc
(2N5416UA only)
(2N5415, S, only)
(2N5416, S, only)
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5415, S, UA
2N5416, S, UA
PNP Low Power, High Voltage Silicon Transistor
Rev. V2
Outline Drawing (TO-5, TO-39)
5
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
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