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BC846B

Description
TRANSISTOR,BJT,NPN,65V V(BR)CEO,100MA I(C),SOT-23
Categorysemiconductor    Discrete semiconductor   
File Size109KB,13 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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TRANSISTOR,BJT,NPN,65V V(BR)CEO,100MA I(C),SOT-23

BC846B Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeUniversal small signal
BC846ALT1G Series
General Purpose
Transistors
NPN Silicon
Features
Moisture Sensitivity Level: 1
ESD Rating − Human Body Model: > 4000 V
ESD Rating
− Machine Model: > 400 V
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC846
BC847, BC850
BC848, BC849
Collector−Base Voltage
BC846
BC847, BC850
BC848, BC849
Emitter−Base Voltage
BC846
BC847, BC850
BC848, BC849
Collector Current − Continuous
I
C
V
EBO
6.0
6.0
5.0
100
mAdc
V
CBO
80
50
30
Vdc
Symbol
V
CEO
65
45
30
Vdc
Value
Unit
Vdc
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
XX M
G
G
1
XX
M
G
= Device Code
= Date Code*
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
Symbol
P
D
Max
225
Unit
mW
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1.8
R
qJA
P
D
556
300
mW/°C
°C/W
mW
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
2.4
R
qJA
T
J
, T
stg
417
−55 to
+150
mW/°C
°C/W
°C
1. FR− 5 = 1.0

0.75

0.062 in.
2. Alumina = 0.4

0.3

0.024 in 99.5% alumina.
©
Semiconductor Components Industries, LLC, 1994
1
January, 2017 − Rev. 17
Publication Order Number:
BC846ALT1/D
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