BDX14AA
MECHANICAL DATA
Dimensions in mm
PNP
SILICON TRANSISTOR,
EPITAXIAL BASE
6.35 (0.250)
8.64 (0.340)
3.68
(0.145) rad.
max.
3.61 (0.142)
3.86 (0.145)
rad.
24.33 (0.958)
24.43 (0.962)
0.71 (0.028)
0.86 (0.034)
11.94 (0.470)
12.70 (0.500)
14.48 (0.570)
14.99 (0.590)
FEATURES:
• LF Large Signal Power Amplification
• Medium Current Switching
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
1.27 (0.050)
1.91 (0.750)
TO66 Package.
Pin 1 – Base
Pin 2 – Emitter
Case - Collector
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
CER
V
CEX
V
EBO
I
C
I
B
P
tot
T
J
T
STG
R
th-(j-c)
Collector – Base Voltage (Open Emitter)
Collector – Emitter Voltage (Open Base)
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Base Current
Power Dissipation
Maximum Junction Temperature
Storage Temperature
Junction to Case.
R
BE
=100
W
V
BE
= +1.5V
- 90V
- 55V
- 60V
- 90V
-7V
-4V
-2V
29W
200°C
–65 to 200°C
6°C / W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 02/00
BDX14AA
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
I
CEX
Collector Emitter Cut Off Current
Test Conditions
V
CE
= -90V
V
CE
= -30V
I
C
= -100mA
I
C
= -100mA
I
E
= -1A
V
BE
= +1.5V
V
BE
= +1.5V
T
case
= 150°C
I
B
= 0
Min.
Typ.
Max.
-1
-5
Unit
mA
V
CEO(SUS)*
Collector Emitter Breakdown Voltage
V
CER(SUS)*
Collector Emitter Breakdown Voltage
V
(BR)EBO*
h
21E
*
V
CE(sat)*
V
BE*
f
T
Emitter Base Breakdown Voltage
R
BE
= 100
W
I
C
=0
I
C
= - 0.5A
I
B
= - 0.05A
I
C
= - 0.5A
I
C
= - 0.2A
-55
-60
-7
25
250
-1
-1.7
4
V
V
—
V
V
MHz
Static Forward Current Transfer Ratio V
CE
= - 4V
Collector Emitter Saturation Voltage
Base Emitter Voltage
Transition Frequency
I
C
= - 0.5A
V
CE
= - 4V
V
CB
= -10V
f = 1MHz
* Pulse test t
p
= 300
m
s ,
d
< 2%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 02/00
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