DISCRETE SEMICONDUCTORS
DATA SHEET
BFG17A
NPN 3 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
1995 Sep 12
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
DESCRIPTION
NPN wideband transistor in a
microminiature plastic SOT143
surface mounting envelope with
double emitter bonding.
It is intended for use in wideband
aerial amplifiers using SMD
technology.
PINNING
PIN
Code: E6
1
2
3
4
collector
base
emitter
emitter
1
Top view
BFG17A
DESCRIPTION
handbook, 2 columns
4
3
2
MSB014
Fig.1 SOT143.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
C
re
G
UM
F
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
feedback capacitance
maximum unilateral power gain
noise figure
up to T
s
= 85
°C;
note 1
I
C
= 25 mA; V
CE
= 1 V;
T
amb
= 25
°C
I
C
= 25 mA; V
CE
= 5 V;
f = 500 MHz; T
amb
= 25
°C
I
C
= 0; V
CE
= 5 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V;
f = 800 MHz; T
amb
= 25
°C
I
C
= 2 mA; V
CE
= 5 V; f = 800 MHz;
T
amb
= 25
°C;
Z
S
= 60
Ω;
b
s
= opt.
open base
CONDITIONS
open emitter
MIN.
−
−
−
−
20
−
−
−
−
TYP.
−
−
−
−
−
2.8
0.4
15
2.5
MAX.
25
15
50
300
150
−
−
−
−
GHz
pF
dB
dB
UNIT
V
V
mA
mW
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 85
°C;
note 1
open emitter
open base
open collector
CONDITIONS
MIN.
−
−
−
−
−
−65
−
MAX.
25
15
2.5
50
300
+150
175
UNIT
V
V
V
mA
mW
°C
°C
1995 Sep 12
2
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
f
T
C
c
C
e
C
re
G
UM
F
V
o
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and G
UM
PARAMETER
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
output voltage
CONDITIONS
I
E
= 0; V
CB
= 10 V
I
C
= 25 mA; V
CE
= 1 V;
T
amb
= 25
°C
I
C
= 25 mA; V
CE
= 5 V;
f = 500 MHz; T
amb
= 25
°C
I
E
= 0; V
CB
= 10 V; f = 1 MHz;
T
amb
= 25
°C
I
C
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 5 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V;
f = 800 MHz; T
amb
= 25
°C
I
C
= 2 mA; V
CE
= 5 V; f = 800 MHz;
T
amb
= 25
°C;
Z
S
= 60
Ω;
b
s
= opt.
note 2
MIN.
−
20
−
−
−
−
−
−
−
TYP.
−
75
2.8
0.7
1.25
0.4
15
2.5
150
PARAMETER
CONDITIONS
BFG17A
VALUE
290
UNIT
K/W
thermal resistance from junction up to T
s
= 85
°C;
note 1
to soldering point
MAX.
50
150
−
−
−
−
−
−
−
UNIT
nA
GHz
pF
pF
pF
dB
dB
mV
s
21 2
=
10 log ------------------------------------------------------------ dB. .
(
1
–
s
11 2
) (
1
–
s
22 2
)
2. d
im
=
−60
dB (DIN 45004B, para. 6,3: 3-tone); I
C
= 14 mA; V
CE
= 10 V; Z
L
= 75
Ω.
V
p
= V
o
; f
p
= 795.25 MHz;
V
q
= V
o
−6
dB; f
q
= 803.25 MHz;
V
r
= V
o
−6
dB; f
r
= 805.25 MHz;
measured at f
(p+q−r)
= 793.25 MHz.
1995 Sep 12
3
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFG17A
handbook, full pagewidth
1.5 nF
1.5 nF
VBB
10 kΩ
L2
L3
1 nF
1 nF
L1
1 nF
270
Ω
DUT
75
Ω
output
VCC
75
Ω
input
3.3 pF
18
Ω
0.68 pF
MBB251
(1)
(2)
L1 = L3 = 5
µH
Ferroxcube choke.
L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.
Fig.2 Intermodulation distortion and second order intermodulation distortion MATV test circuit.
handbook, halfpage
120
MBB374
MBB370
handbook, halfpage
1.2
h FE
Cc
(pF)
0.8
80
40
0.4
0
0
10
20
I C (mA)
30
0
0
4
8
12
V CB (V)
16
V
CE
= 1 V; T
amb
= 25
°C.
I
E
= 0; f = 1 MHz; T
amb
= 25
°C
Fig.3
DC current gain as function of collector
current.
Fig.4
Collector capacitance as a function of
collector-base voltage.
1995 Sep 12
4
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFG17A
MBB373
MBB371
handbook, halfpage
4
handbook, halfpage
40
G UM
(dB)
fT
(GHz)
30
3
20
10
2
0
10
20
I C (mA)
30
0
10
2
10
3
f (MHz)
10
4
V
CE
= 5 V; f = 500 MHz; T
amb
= 25
°C.
I
C
= 15 mA; V
CE
= 10 V; T
amb
= 25
°C.
Fig.5
Transition frequency as a function of
collector current.
Fig.6
Maximum unilateral power gain as a
function of frequency.
MBB372
handbook, halfpage
5
F
(dB)
4
3
2
1
0
0
4
8
12
16
20
I C (mA)
V
CE
= 5 V; f = 800 MHz; T
amb
= 25
°C;
Z
S
= 60
Ω;
b
s
= opt.
Fig.7
Minimum noise figure as a function of
collector current.
1995 Sep 12
5
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