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BFG19

Description
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)
File Size52KB,6 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BFG19 Overview

NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)

BFG 19S
NPN Silicon RF Transistor
• For low noise, low distortion broadband
amplifiers in antenna and
telecommunications systems up to 1.5GHz
at collector currents from 10 mA to 70 mA
• CECC-type available: CECC 50 002/259
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFG 19S
BFG19S Q62702-F1359
1=E
2=B
3=E
4=C
Package
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Symbol
Values
15
20
20
3
100
12
W
1
150
- 65 ... + 150
- 65 ... + 150
75
°C
mA
Unit
V
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
1)
T
S
75 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
R
thJS
K/W
1)
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-13-1996

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BFG19 BFG19S Q62702-F1359
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