DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BSR17A
NPN switching transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 02
Philips Semiconductors
Product specification
NPN switching transistor
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 40 V).
APPLICATIONS
•
Switching and linear amplification.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complement: BSR18A.
1
handbook, halfpage
BSR17A
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
MARKING
TYPE NUMBER
BSR17A
MARKING CODE
U92
Top view
1
2
MAM255
2
Fig.1 Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
t
off
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
turn-off time
T
amb
≤
25
°C
I
C
= 10 mA; V
CE
= 1 V
I
C
= 10 mA; V
CE
= 20 V; f = 100 MHz
I
Con
= 10 mA; I
Bon
= 1 mA; I
Boff
=
−1
mA
open emitter
open base
CONDITIONS
−
−
−
−
100
300
−
MIN.
MAX.
60
40
100
250
300
−
240
MHz
ns
V
V
mA
mW
UNIT
1997 Jun 02
2
Philips Semiconductors
Product specification
NPN switching transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
BSR17A
MAX.
60
40
6
100
200
100
250
+150
150
+150
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
UNIT
K/W
1997 Jun 02
3
Philips Semiconductors
Product specification
NPN switching transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 150
°C
I
C
= 0; V
EB
= 6 V
V
CE
= 1 V; note 1; see Fig.2
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA
I
C
= 100 mA
V
CEsat
V
BEsat
C
c
C
e
f
T
F
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
= 10 mA; I
B
= 1 mA; note 1
I
C
= 50 mA; I
B
= 5 mA; note 1
I
C
= 10 mA; I
B
= 1 mA; note 1
I
C
= 50 mA; I
B
= 5 mA; note 1
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz
I
C
= 10 mA; V
CE
= 20 V; f = 100 MHz
I
C
= 100
µA;
V
CE
= 5 V; R
S
= 1 kΩ;
f = 10 Hz to 15.7 kHz
60
80
100
60
30
−
−
650
−
−
−
300
−
MIN.
−
−
−
BSR17A
MAX.
50
5
50
−
−
300
−
−
200
200
850
950
4
8
−
5
UNIT
nA
µA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
Switching times (between 10% and 90% levels);
see Fig.3
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= 10 mA; I
Bon
= 1 mA; I
Boff
=
−1
mA
−
−
−
−
−
−
65
35
35
240
200
50
ns
ns
ns
ns
ns
ns
1997 Jun 02
4
Philips Semiconductors
Product specification
NPN switching transistor
BSR17A
MGD834
handbook, full pagewidth
160
hFE
120
80
40
0
10
−2
10
−1
1
10
10
2
IC (mA)
10
3
V
CE
= 1 V.
Fig.2 DC current gain; typical values.
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MLB826
V
i
= 5 V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 56
Ω;
R2 = 2.5 kΩ; R
B
= 3.9 kΩ; R
C
= 270
Ω.
V
BB
=
−1.9
V; V
CC
= 3 V.
Oscilloscope input impedance Z
i
= 50
Ω.
Fig.3 Test circuit for switching times.
1997 Jun 02
5
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