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2SA2151A

Description
15 A, 230 V, PNP, Si, POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size82KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet Parametric View All

2SA2151A Overview

15 A, 230 V, PNP, Si, POWER TRANSISTOR

2SA2151A Parametric

Parameter NameAttribute value
Maximum collector current15 A
Maximum Collector-Emitter Voltage230 V
Number of terminals3
Processing package descriptionMT-100, TO-3P, 3 PIN
EU RoHS regulationsYes
stateActive
structureSINGLE
Minimum DC amplification factor50
jesd_30_codeR-PSFM-T3
moisture_sensitivity_levelNOT SPECIFIED
Number of components1
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
eak_reflow_temperature__cel_NOT SPECIFIED
larity_channel_typePNP
qualification_statusCOMMERCIAL
surface mountNO
terminal coatingNOT SPECIFIED
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Rated crossover frequency20 MHz
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2SA2151A
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage-
V
(BR)CEO
= -230V(Min)
·Good
Linearity of h
FE
·Complement
to Type 2SC6011A
APPLICATIONS
·Designed
for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-230
V
V
CEO
Collector-Emitter Voltage
-230
V
V
EBO
Emitter-Base Voltage
-6
V
I
C
Collector Current-Continuous
-15
A
I
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
-4
A
P
C
160
W
T
J
150
T
stg
Storage Temperature Range
-55~150
isc website
www.iscsemi.cn
1
isc&iscsemi
is registered trademark
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