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BLF6G15L-500H_15

Description
Power LDMOS transistor
File Size698KB,13 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BLF6G15L-500H_15 Overview

Power LDMOS transistor

BLF6G15L-500H;
BLF6G15LS-500H
Power LDMOS transistor
Rev. 3 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
A 500 W LDMOS RF power transistor for transmitter applications and industrial
applications. The transistor is optimized for digital applications and can deliver 65 W
average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal for
digital transmitter applications.
Table 1.
Test information
RF performance at V
DS
= 50 V; I
Dq
= 1.3 A.
Mode of operation
2-tone, class-AB
DVB-T (8k OFDM)
[1]
[2]
f
(MHz)
1452 to 1492
1452 to 1492
P
L(AV)
(W)
250
65
G
p
(dB)
15
16
D
(%)
34
19
IMD3
(dBc)
24
-
IMD
shldr
(dBc)
-
32
[1]
PAR
(dB)
-
9
[2]
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Digital transmitter applications DVB at 1.5 GHz
Industrial applications at 1.5 GHz
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