BLF8G19LS-170BV
Power LDMOS transistor
Rev. 3 — 1 May 2015
Product data sheet
1. Product profile
1.1 General description
170 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 1800 MHz to 1990 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
1-carrier W-CDMA
[2]
[1]
[2]
f
(MHz)
1930 to 1990
1805 to 1880
I
Dq
(mA)
1300
1300
V
DS
(V)
32
28
P
L(AV)
(W)
60
33
G
p
(dB)
18.0
19.8
D
(%)
32
29
ACPR
(dBc)
31
40
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (100 MHz typical)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Integrated current sense
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for W-CDMA base stations and multi carrier applications in the
1800 MHz to 1990 MHz frequency range
NXP Semiconductors
BLF8G19LS-170BV
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4,5
6
7
[1]
Pinning
Description
drain
gate
source
video decoupling
sense gate
sense drain
[1]
Simplified outline
Graphic symbol
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF8G19LS-170BV -
earless flanged LDMOST ceramic package; 6 leads
Version
SOT1120B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
V
GS(sense)
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
sense gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
0.5
65
[1]
Max
65
+13
+9
+150
225
Unit
V
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 55 W
Typ
0.27
Unit
K/W
BLF8G19LS-170BV
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 May 2015
2 of 13
NXP Semiconductors
BLF8G19LS-170BV
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
I
Dq
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 216 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 10.8 A
Min
65
1.5
-
-
-
-
-
Typ
-
1.9
-
40
-
16
0.06
Max
-
2.3
4.5
-
450
-
-
Unit
V
V
A
A
nA
S
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 2.16 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 7.56 A
quiescent drain current
main transistor:
V
DS
= 32 V
sense transistor:
I
DS
= 23.4 mA;
V
DS
= 30.4 V
1175 1300 1425 mA
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test model 1; 64
DPCH; f
1
= 1937.5 MHz; f
2
= 1962.5 MHz; f
3
= 1982.5 MHz; f
4
= 1987.5 MHz; RF performance at
V
DS
= 32 V; I
Dq
= 1300 mA; T
case
= 25
C; unless otherwise specified; in a class-AB production test
circuit.
Symbol
G
p
RL
in
D
ACPR
5M
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio (5 MHz)
Conditions
P
L(AV)
= 60 W
P
L(AV)
= 60 W
P
L(AV)
= 60 W
P
L(AV)
= 60 W
Min Typ
17.3 18.0
-
28
-
13
32
31
Max
20.2
7
-
28
Unit
dB
dB
%
dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLF8G19LS-170BV is capable to withstand a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 32 V;
I
Dq
= 1300 mA; P
L
= 214 W (CW); f = 1930 MHz and also under the following conditions:
V
DS
= 28 V; I
Dq
= 1300 mA; P
L
= 170 W (CW); f = 1805 MHz.
BLF8G19LS-170BV
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 May 2015
3 of 13
NXP Semiconductors
BLF8G19LS-170BV
Power LDMOS transistor
7.2 Impedance information
Table 8.
Typical impedance
I
Dq
= 1300 mA; main transistor V
DS
= 32 V.
f
(MHz)
1930
1960
1990
[1]
Z
S
and Z
L
defined in
Figure 1.
Z
S[1]
()
1.8
j3.4
1.8
j3.4
1.9
j4.0
Z
L[1]
()
1.1
j2.8
1.1
j2.8
1.0
j2.8
Fig 1.
Definition of transistor impedance
7.3 VBW in class-AB operation
The BLF8G19LS-170BV shows 100 MHz (typical) video bandwidth in a class-AB test
circuit in the 1900 MHz band at V
DS
= 32 V and I
Dq
= 1.3 A.
BLF8G19LS-170BV
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 May 2015
4 of 13
NXP Semiconductors
BLF8G19LS-170BV
Power LDMOS transistor
7.4 Test circuit
Printed-Circuit Board (PCB): Taconic RF35;
r
= 3.5; thickness = 0.765 mm;
thickness copper plating = 35
m.
See
Table 9
for a list of components.
Fig 2.
Component layout for class-AB production test circuit
Table 9.
List of components
For test circuit see
Figure 2.
Component
C1, C2, C3, C4, C5
C6, C8
C7
C9, C10
C11, C16, C17
C12, C13
C14, C15
C18
R1
R2
R3
R4
R5
[1]
[2]
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
SMD resistor
SMD resistor
SMD resistor
SMD resistor
SMD resistor
Value
10 pF
0.1 pF
0.2 pF
120 pF
4.7
F,
50 V
10
F,
50 V
1
F,
50 V
470
F,
63 V
4.7
470
820
12
2200
[1]
[1]
[1]
[1]
[2]
[2]
[2]
Remarks
ATC100B
ATC100B
ATC100B
ATC100B
Murata
Murata
Murata
Philips 1206
Philips 1206
Philips 1206
Philips 1206
Philips 1206
American Technical Ceramics type 100B or capacitor of same quality.
Murata or capacitor of same quality.
BLF8G19LS-170BV
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 May 2015
5 of 13
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