BLF8G20LS-220
Power LDMOS transistor
Rev. 2 — 30 May 2013
Product data sheet
1. Product profile
1.1 General description
220 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
1805 to 1880
I
Dq
(mA)
1600
V
DS
(V)
28
P
L(AV)
(W)
55
G
p
(dB)
18.9
D
(%)
34
ACPR
(dBc)
31
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1800 MHz to 2000 MHz frequency range
NXP Semiconductors
BLF8G20LS-220
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
3
2
Graphic symbol
1
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF8G20LS-220
-
earless flanged ceramic package; 2 leads
Version
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
65
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability.
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 55 W;
V
DS
= 28 V; I
Dq
= 1600 mA
Typ
0.27
Unit
K/W
BLF8G20LS-220
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 30 May 2013
2 of 12
NXP Semiconductors
BLF8G20LS-220
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C, unless otherwise specified.
Symbol Parameter
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 270 mA
V
DS
= 28 V; I
D
= 1.6 A
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 13.5 A
Min
65
1.5
1.7
-
-
-
-
-
Typ
-
1.9
2.1
-
50.6
-
19.6
Max
-
2.3
2.5
4.2
-
420
-
Unit
V
V
V
A
A
nA
S
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 2.7 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 9.45 A
0.057 -
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on CCDF; 3GPP test model 1;
64 DPCH; f
1
= 1807.5 MHz; f
2
= 1812.5 MHz; f
3
= 1872.5 MHz; f
4
= 1877.5 MHz; RF performance
at V
DS
= 28 V; I
Dq
= 1600 mA; T
case
= 25
C; unless otherwise specified; in a production circuit.
Symbol
G
p
D
RL
in
ACPR
Parameter
power gain
drain efficiency
input return loss
adjacent channel power ratio
Conditions
P
L(AV)
= 55 W
P
L(AV)
= 55 W
P
L(AV)
= 55 W
P
L(AV)
= 55 W
Min
17.8
29
-
-
Typ
18.9
34
31
Max
-
-
26
Unit
dB
%
dB
dBc
15.5 7
7. Test information
7.1 Ruggedness in class-AB operation
The BLF8G20LS-220 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 1600 mA; P
L
= 200 W (CW); f = 1805 MHz.
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data; I
Dq
= 1600 mA; V
DS
= 28 V.
f
(MHz)
1805
1843
1880
[1]
Z
S
and Z
L
defined in
Figure 1.
Z
S[1]
()
1.38
j3.45
1.43
j3.63
1.38
j3.56
Z
L[1]
()
0.90
j2.50
0.82
j2.37
0.90
j2.60
BLF8G20LS-220
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 30 May 2013
3 of 12
NXP Semiconductors
BLF8G20LS-220
Power LDMOS transistor
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Test circuit
See
Table 9
for list of components.
Fig 2.
Component layout
Table 9.
List of components
See
Figure 2
for component layout.
The used PCB material is Rogers RO4350B with a thickness of 0.76 mm.
Component
C1, C2, C3, C4, C5,
C6
C7, C8, C9, C10
C11, C12, C13, C14
C15, C16
R1
[1]
[2]
[3]
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
chip resistor
Value
33 pF
1
F
10
F
470
F,
63 V
9.1
[1]
Remarks
ATC100B
TDK
Murata
SMD 0805
[2]
[3]
American Technical Ceramics type 100B or capacitor of same quality.
TDK or capacitor of same quality.
Murata or capacitor of same quality.
BLF8G20LS-220
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 30 May 2013
4 of 12
NXP Semiconductors
BLF8G20LS-220
Power LDMOS transistor
7.4 Graphical data
7.4.1 CW pulse
V
DS
= 28 V; I
Dq
= 1600 mA; t
p
= 100
s;
= 10 %.
(1) f = 1805 MHz
(2) f = 1843 MHz
(3) f = 1880 MHz
V
DS
= 28 V; I
Dq
= 1600 mA; t
p
= 100
s;
= 10 %.
(1) f = 1805 MHz
(2) f = 1843 MHz
(3) f = 1880 MHz
Fig 3.
Power gain and drain efficiency as function of
output power; typical values
Fig 4.
Input return loss as a function of
output power; typical values
BLF8G20LS-220
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 30 May 2013
5 of 12
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